Datasheet HMC7950 (Analog Devices)

2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier Data Sheet HMC7950 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 16 dBm typical UT O C ND ND C Saturated output power (PSAT): 19.5 dBm typical NI G RF G NI Gain: 15 dB typical 16 15 14 12 13 Noise figure: 2.0 dB typical Output third-order intercept (IP3): 26 dBm typical Supply voltage: 5 V at 64 mA 50 Ω matched input/output NIC 1 11 NIC HMC7950 APPLICATIONS NIC 2 10 NIC Test instrumentation Military and space VDD 3 9 NIC 4 5 6 7 8 2 C PACKAGE ND FIN ND NI BASE G R G V GG
001
GND
15412- Figure 1.
GENERAL DESCRIPTION
The HMC7950 is a gallium arsenide (GaAs), pseudomorphic is self biased with only a single positive supply needed to high electron mobility transistor (pHEMT), monolithic microwave achieve a drain current, IDD, of 64 mA. The HMC7950 also has a integrated circuit (MMIC). The HMC7950 is a wideband low gain control option, VGG2. The HMC7950 amplifier input/outputs noise amplifier that operates between 2 GHz and 28 GHz. The are internal y matched to 50 Ω and dc blocked. It comes in a amplifier typical y provides 15 dB of gain, 2.0 dB of noise figure, 6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain easy to handle and assemble. compression, requiring 64 mA from a 5 V supply. The HMC7950
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS 2 GHz TO 5 GHz FREQUENCY RANGE 5 GHz TO 18 GHz FREQUENCY RANGE 18 GHz TO 28 GHz FREQUENCY RANGE DC SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE