Datasheet HMC8410CHIPS (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier |
| 页数 / 页 | 17 / 3 — Data Sheet. HMC8410CHIPS. SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY … |
| 修订版 | C |
| 文件格式/大小 | PDF / 427 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC8410CHIPS. SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol. Min. Typ. Max. Unit
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文件文字版本
Data Sheet HMC8410CHIPS SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 3 GHz GAIN 17.5 19.5 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.1 1.6 dB 0.3 GHz to 3 GHz RETURN LOSS Input 15 dB Output 24 dB OUTPUT Output Power for 1 dB Compression P1dB 19.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third Order Intercept IP3 33 dBm Output Second Order Intercept IP2 37 dBm SUPPLY Current IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical Voltage VDD 2 5 6 V
3 GHz TO 8 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 3 8 GHz GAIN 15.5 18 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.4 1.9 dB RETURN LOSS Input 12 dB Output 12 dB OUTPUT Output Power for 1 dB Compression P1dB 17.5 20.5 dBm Saturated Output Power PSAT 22.5 dBm Output Third Order Intercept IP3 31.5 dBm Output Second Order Intercept IP2 33 dBm SUPPLY Current IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical Voltage VDD 2 5 6 V Rev. C | Page 3 of 17 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE 3 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 10 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 3 GHz GAIN 17.5 19.5 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.1 1.6 dB 0.3 GHz to 3 GHz RETURN LOSS Input 15 dB Output 24 dB OUTPUT Output Power for 1 dB Compression P1dB 19.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third Order Intercept IP3 33 dBm Output Second Order Intercept IP2 37 dBm SUPPLY Current IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical Voltage VDD 2 5 6 V
3 GHz TO 8 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 3 8 GHz GAIN 15.5 18 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.4 1.9 dB RETURN LOSS Input 12 dB Output 12 dB OUTPUT Output Power for 1 dB Compression P1dB 17.5 20.5 dBm Saturated Output Power PSAT 22.5 dBm Output Third Order Intercept IP3 31.5 dBm Output Second Order Intercept IP2 33 dBm SUPPLY Current IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical Voltage VDD 2 5 6 V Rev. C | Page 3 of 17 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE 3 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 10 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE