Datasheet HMC8401 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | DC to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier |
| 页数 / 页 | 17 / 10 — HMC8401. Data Sheet. Bc). IM3. 3GHz. 7GHz. 11GHz. 17GHz. 21GHz. 25GHz. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 363 Kb |
| 文件语言 | 英语 |
HMC8401. Data Sheet. Bc). IM3. 3GHz. 7GHz. 11GHz. 17GHz. 21GHz. 25GHz. 27GHz. P UT/TONE (dBm). UT/TONE (dBm. OUT/TONE (dBm). 100. +85°C. –10. +25°C –55°C
该数据表的模型线
文件文字版本
HMC8401 Data Sheet 55 55 50 50 45 45 Bc) Bc) d d ( 40 ( ( 40 IM3 IM3 35 3GHz 35 3GHz 7GHz 7GHz 11GHz 11GHz 17GHz 17GHz 30 21GHz 30 21GHz 25GHz 25GHz 27GHz 27GHz 25 25 0 1 2 3 4 5 6 7 8
022
0 1 2 3 4 5 6 7 8
025
PO P UT/TONE (dBm) UT/TONE (dBm P
13850-
OUT/TONE (dBm)
13850- Figure 22. Output IM3 vs. POUT/Tone for Various Frequencies at VDD = 7.5 V Figure 25. Output IM3 vs. POUT/Tone for Various Frequencies at VDD = 8.5 V
0 20 100 +85°C 18 96 –10 +25°C –55°C ) 16 92 B) –20 E (% d ( 14 88 N PA ), IO –30 B T 12 84 A (d L mA) –40 IN 10 80 ( SO A G ), I DD SE I 8 76 –50 Bm d ( 6 72 EVER R –60 UT OP 4 68 POUT –70 GAIN 2 PAE 64 IDD –80 0 60 0 5 10 15 20 25 30
023
–9 –7 –5 –3 –1 1 3 5 7
026
FREQUENCY (GHz) INPUT POWER (dBm)
13850- 13850- Figure 23. Reverse Isolation vs. Frequency at Various Temperatures Figure 26. Power Compression at 15 GHz
0.70 17 16 0.65 15 ) (W 14 N 0.60 IO T 13 B) PA d ( 0.55 12 IN ISSI D GA 11 ER W 0.50 10 PO 3GHz 9GHz 9 5V 0.45 15GHz 6.5V 23GHz 7.5V 8 28GHz 8.5V 0.40 7 –10 –8 –6 –4 –2 0 2 4 6 8
024
0 5 10 15 20 25 30
027
INPUT POWER (dBm) FREQUENCY (GHz)
13850- 13850- Figure 24. Power Dissipation vs. Input Power at Various Frequencies, TA = 85°C Figure 27. Gain vs. Frequency at Various Supply Voltages Rev. B | Page 10 of 17 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 0.01 GHz to 3 GHz Frequency Range 3 GHz to 26 GHz Frequency Range 26 GHz to 28 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Typical Application Circuit Assembly Diagram Outline Dimensions Ordering Guide
022
0 1 2 3 4 5 6 7 8
025
PO P UT/TONE (dBm) UT/TONE (dBm P
13850-
OUT/TONE (dBm)
13850- Figure 22. Output IM3 vs. POUT/Tone for Various Frequencies at VDD = 7.5 V Figure 25. Output IM3 vs. POUT/Tone for Various Frequencies at VDD = 8.5 V
0 20 100 +85°C 18 96 –10 +25°C –55°C ) 16 92 B) –20 E (% d ( 14 88 N PA ), IO –30 B T 12 84 A (d L mA) –40 IN 10 80 ( SO A G ), I DD SE I 8 76 –50 Bm d ( 6 72 EVER R –60 UT OP 4 68 POUT –70 GAIN 2 PAE 64 IDD –80 0 60 0 5 10 15 20 25 30
023
–9 –7 –5 –3 –1 1 3 5 7
026
FREQUENCY (GHz) INPUT POWER (dBm)
13850- 13850- Figure 23. Reverse Isolation vs. Frequency at Various Temperatures Figure 26. Power Compression at 15 GHz
0.70 17 16 0.65 15 ) (W 14 N 0.60 IO T 13 B) PA d ( 0.55 12 IN ISSI D GA 11 ER W 0.50 10 PO 3GHz 9GHz 9 5V 0.45 15GHz 6.5V 23GHz 7.5V 8 28GHz 8.5V 0.40 7 –10 –8 –6 –4 –2 0 2 4 6 8
024
0 5 10 15 20 25 30
027
INPUT POWER (dBm) FREQUENCY (GHz)
13850- 13850- Figure 24. Power Dissipation vs. Input Power at Various Frequencies, TA = 85°C Figure 27. Gain vs. Frequency at Various Supply Voltages Rev. B | Page 10 of 17 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 0.01 GHz to 3 GHz Frequency Range 3 GHz to 26 GHz Frequency Range 26 GHz to 28 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Typical Application Circuit Assembly Diagram Outline Dimensions Ordering Guide