Datasheet HMC1127 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz |
| 页数 / 页 | 16 / 1 — GaAs, pHEMT, MMIC, High Gain. Power Amplifier, 2 GHz to 50 GHz. Data … |
| 修订版 | B |
| 文件格式/大小 | PDF / 391 Kb |
| 文件语言 | 英语 |
GaAs, pHEMT, MMIC, High Gain. Power Amplifier, 2 GHz to 50 GHz. Data Sheet. HMC1127. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz Data Sheet HMC1127 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 12.5 dBm typical at VDD 8 GHz to 30 GHz 2 HMC1127 Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 3 RFOUT 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA RFIN 1 50 Ω matched input/output 5 4
001
Die size: 2.7 mm × 1.45 mm × 0.1 mm VGG1 VGG2
13085- Figure 1.
APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION
The HMC1127 is a gallium arsenide (GaAs), pseudomorphic requiring 80 mA from a 5 V supply. The HMC1127 amplifier high electron mobility transfer (pHEMT), monolithic inputs/outputs are internal y matched to 50 Ω facilitating microwave integrated circuit (MMIC), distributed power integration into multichip modules (MCMs). All data is taken amplifier that operates between 2 GHz and 50 GHz. The with the chip connected via two 0.025 mm (1 mil) wire bonds HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and of minimal length 0.31 mm (12 mils). 12.5 dBm of output power at 1 dB gain compression while
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2015–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE
001
Die size: 2.7 mm × 1.45 mm × 0.1 mm VGG1 VGG2
13085- Figure 1.
APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION
The HMC1127 is a gallium arsenide (GaAs), pseudomorphic requiring 80 mA from a 5 V supply. The HMC1127 amplifier high electron mobility transfer (pHEMT), monolithic inputs/outputs are internal y matched to 50 Ω facilitating microwave integrated circuit (MMIC), distributed power integration into multichip modules (MCMs). All data is taken amplifier that operates between 2 GHz and 50 GHz. The with the chip connected via two 0.025 mm (1 mil) wire bonds HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and of minimal length 0.31 mm (12 mils). 12.5 dBm of output power at 1 dB gain compression while
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2015–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE