Datasheet HMC1127 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz |
| 页数 / 页 | 16 / 5 — Data Sheet. HMC1127. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 391 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC1127. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. ESD CAUTION
该数据表的模型线
文件文字版本
Data Sheet HMC1127 ABSOLUTE MAXIMUM RATINGS Table 5.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage (VDD) 8.5 V or any other conditions above those indicated in the operational Gate Bias Voltage section of this specification is not implied. Operation beyond VGG1 −3 V dc to 0 V dc the maximum operating conditions for extended periods may VGG2 affect product reliability. For VDD = 8 V1 3.6 V For VDD = 7 V 3.0 V For VDD = 6 V >2.0 V
ESD CAUTION
For VDD = 4 V to 5 V >1.2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS (TA = 2.53 W 85°C, Derate 26.1 mW/°C Above 85°C) Thermal Resistance, RTH (Channel to Die 38.3°C/W2 Bottom) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class1A, passed 250 V 1 IDD < 125 mA. 2 Based on a thermal epoxy of 20 W/°C. Rev. B | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage (VDD) 8.5 V or any other conditions above those indicated in the operational Gate Bias Voltage section of this specification is not implied. Operation beyond VGG1 −3 V dc to 0 V dc the maximum operating conditions for extended periods may VGG2 affect product reliability. For VDD = 8 V1 3.6 V For VDD = 7 V 3.0 V For VDD = 6 V >2.0 V
ESD CAUTION
For VDD = 4 V to 5 V >1.2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS (TA = 2.53 W 85°C, Derate 26.1 mW/°C Above 85°C) Thermal Resistance, RTH (Channel to Die 38.3°C/W2 Bottom) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class1A, passed 250 V 1 IDD < 125 mA. 2 Based on a thermal epoxy of 20 W/°C. Rev. B | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE