Datasheet HMC1126 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz |
| 页数 / 页 | 16 / 5 — Data Sheet. HMC1126. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 333 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC1126. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. ESD CAUTION
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文件文字版本
Data Sheet HMC1126 ABSOLUTE MAXIMUM RATINGS Table 5.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage (VDD) 8.5 V or any other conditions above those indicated in the operational Gate Bias Voltage section of this specification is not implied. Operation beyond VGG1 −3 V to 0 V the maximum operating conditions for extended periods may VGG2 affect product reliability. For VDD = 8 V1 3.6 V For VDD = 7 V 3.0 V For VDD = 6 V >2.0 V
ESD CAUTION
For VDD = 4 V to 5 V >1.2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS 1.915 W (TA = 85°C, Derate 21.3 mW/°C at 85°C) Thermal Resistance, RTH (Channel to 47°C/W2 Bottom of Die) Storage Temperature −65°C to +150°C Operating Temperature −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class 1A, passed 250 V 1 IDD < 105 mA. 2 Based upon a thermal epoxy of 20 W/°C. Rev. C | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage (VDD) 8.5 V or any other conditions above those indicated in the operational Gate Bias Voltage section of this specification is not implied. Operation beyond VGG1 −3 V to 0 V the maximum operating conditions for extended periods may VGG2 affect product reliability. For VDD = 8 V1 3.6 V For VDD = 7 V 3.0 V For VDD = 6 V >2.0 V
ESD CAUTION
For VDD = 4 V to 5 V >1.2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS 1.915 W (TA = 85°C, Derate 21.3 mW/°C at 85°C) Thermal Resistance, RTH (Channel to 47°C/W2 Bottom of Die) Storage Temperature −65°C to +150°C Operating Temperature −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class 1A, passed 250 V 1 IDD < 105 mA. 2 Based upon a thermal epoxy of 20 W/°C. Rev. C | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE