Datasheet HMC1049 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz |
| 页数 / 页 | 14 / 4 — HMC1049. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 272 Kb |
| 文件语言 | 英语 |
HMC1049. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. ESD CAUTION
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HMC1049 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (V stress rating only; functional operation of the product at these DD) 10 V Drain Bias Voltage (RFOUT/V or any other conditions above those indicated in the DD) 7 V RF Input Power 18 dBm operational section of this specification is not implied. Gate Bias Voltage, VGG −2 V to +0.2 V Operation beyond the maximum operating conditions for Channel Temperature 175°C extended periods may affect product reliability. Continuous PDISS (T = 85°C) 3.4 W (Derate 37.4 mW/°C Above 85°C)
ESD CAUTION
Thermal Resistance (Channel to Die Bottom) 26.7°C/W Storage Temperature −65°C to +150°C Operating Temperature −55°C to +85°C Rev. B | Page 4 of 14 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Absolute Maximum Ratings ESD Caution PIN Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Application Circuit Assembly Diagram Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (V stress rating only; functional operation of the product at these DD) 10 V Drain Bias Voltage (RFOUT/V or any other conditions above those indicated in the DD) 7 V RF Input Power 18 dBm operational section of this specification is not implied. Gate Bias Voltage, VGG −2 V to +0.2 V Operation beyond the maximum operating conditions for Channel Temperature 175°C extended periods may affect product reliability. Continuous PDISS (T = 85°C) 3.4 W (Derate 37.4 mW/°C Above 85°C)
ESD CAUTION
Thermal Resistance (Channel to Die Bottom) 26.7°C/W Storage Temperature −65°C to +150°C Operating Temperature −55°C to +85°C Rev. B | Page 4 of 14 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Absolute Maximum Ratings ESD Caution PIN Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Application Circuit Assembly Diagram Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide