Datasheet HMC1040LP3CE (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 24 - 43.5 GHz |
| 页数 / 页 | 6 / 1 — HMC1040LP3CE. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 24 - 43.5 GHz. … |
| 文件格式/大小 | PDF / 591 Kb |
| 文件语言 | 英语 |
HMC1040LP3CE. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 24 - 43.5 GHz. Typical Applications. Features. Functional Diagram
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HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 24 - 43.5 GHz Typical Applications Features
This HmC1040lp3Be is ideal for: low Noise figure: 2.2 dB T • Point-to-Point Radios High Gain: 23 dB m • Test Instrumentation p1dB output power: +12 dBm s • SatCom Transponders & VSAT single supply: +2.5V @ 70 mA e - • Industrial Sensors output ip3: +22 dBm is • EW & ECM Subsystems 50 ohm matched input/output o 16 lead 3x3 mm smT package: 16mm² w N
Functional Diagram General Description
lo The HMC1040LP3CE is a self-biased GaAs MMIC low Noise Amplifier housed in a leadless 3x3 mm s - plastic surface mount package. The amplifier operates r between 24 and 43.5 GHz, delivering 23 dB of small ie signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. lif The P1dB output power of +12 dBm enables the LNA to p function as a LO driver for many of Hittite’s balanced, I/Q m and image reject mixers. The HmC1040lp3Ce fe- A atures I/Os that are DC blocked and internal y mat- ched to 50 Ohms, and is ideal for high capacity microwave radios and VsAT applications.
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units Frequency Range 24 - 27.5 27.5 - 33.5 33.5 - 43.5 GHz Gain [1] 22 25 20 23 17 20 dB Gain Variation over Temperature 0.022 0.021 0.021 dB /°C Noise figure [1] 2.7 3.2 2.2 2.7 2.7 3.2 dB input return loss 11 12 10 dB output return loss 16 13 10 dB output power for 1 dB Compression 12 12 12 dBm saturated output power (psat) 14 14 14 dBm output Third order intercept (ip3) 22 22 24 dBm supply Current (idd) 70 85 70 85 70 85 mA (Vdd = 2.5V) [1] Board loss subtracted out. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v00.0112
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 24 - 43.5 GHz Typical Applications Features
This HmC1040lp3Be is ideal for: low Noise figure: 2.2 dB T • Point-to-Point Radios High Gain: 23 dB m • Test Instrumentation p1dB output power: +12 dBm s • SatCom Transponders & VSAT single supply: +2.5V @ 70 mA e - • Industrial Sensors output ip3: +22 dBm is • EW & ECM Subsystems 50 ohm matched input/output o 16 lead 3x3 mm smT package: 16mm² w N
Functional Diagram General Description
lo The HMC1040LP3CE is a self-biased GaAs MMIC low Noise Amplifier housed in a leadless 3x3 mm s - plastic surface mount package. The amplifier operates r between 24 and 43.5 GHz, delivering 23 dB of small ie signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. lif The P1dB output power of +12 dBm enables the LNA to p function as a LO driver for many of Hittite’s balanced, I/Q m and image reject mixers. The HmC1040lp3Ce fe- A atures I/Os that are DC blocked and internal y mat- ched to 50 Ohms, and is ideal for high capacity microwave radios and VsAT applications.
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units Frequency Range 24 - 27.5 27.5 - 33.5 33.5 - 43.5 GHz Gain [1] 22 25 20 23 17 20 dB Gain Variation over Temperature 0.022 0.021 0.021 dB /°C Noise figure [1] 2.7 3.2 2.2 2.7 2.7 3.2 dB input return loss 11 12 10 dB output return loss 16 13 10 dB output power for 1 dB Compression 12 12 12 dBm saturated output power (psat) 14 14 14 dBm output Third order intercept (ip3) 22 22 24 dBm supply Current (idd) 70 85 70 85 70 85 mA (Vdd = 2.5V) [1] Board loss subtracted out. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D