Datasheet HMC962LC4 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 7.5 - 26.5 GHz |
| 页数 / 页 | 6 / 1 — HMC962LC4. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 7.5 - 26.5 GHz. Typical … |
| 文件格式/大小 | PDF / 374 Kb |
| 文件语言 | 英语 |
HMC962LC4. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 7.5 - 26.5 GHz. Typical Applications. Features. Functional Diagram
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HMC962LC4
v02.0614
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 7.5 - 26.5 GHz Typical Applications Features
This HmC962lC4 is ideal for: low Noise figure: 2.5 dB T • Point-to-Point Radios Gain: 13 dB m • Point-to-Multi-Point Radios p1dB output power: 13 dBm s • Military & Space single supply Voltage: +3.5V @ 70mA e - • Test Instrumentation output ip3: +23 dBm is 50 ohm matched input/output o 24 lead 4x4 mm smT package: 16mm² w N
Functional Diagram General Description
lo The HmC962lC4 is a self-biased GaAs mmiC low Noise Amplifier housed in a leadless 4x4 mm ceramic s - surface mount package. The amplifier operates r between 7.5 and 26.5 GHz, providing 13 dB of small ie signal gain, 2.5 dB noise figure, and output ip3 of +23 dBm, while requiring only 70 mA from a +3.5 V lif supply. The p1dB output power of +13 dBm enables p the lNA to function as a lo driver for balanced, i/Q m or image reject mixers. The HmC962lC4 also fe- A atures i/os that are DC blocked and internal y mat- ched to 50 ohms, making it ideal for high capacity microwave radios and VsAT applications.
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 70 mA A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 7.5 - 10 10 - 24 24 - 26.5 GHz Gain 10 12 10 13 8 10 dB Gain Variation over Temperature 0.027 0.024 0.024 dB / °C Noise figure [1] 2.5 3.7 2.5 3 2.7 3.7 dB input return loss 13 10 7 dB output return loss 10 12 11 dB output power for 1 dB Compression 10 12 13 dBm saturated output power (psat) 14 15 15 dBm output Third order intercept (ip3) 22 23 25 dBm supply Current (idd) 70 95 70 95 70 95 mA (Vdd = 3.5V, Vgg1 = Vgg2 = open) [1] Board loss subtracted out. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v02.0614
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 7.5 - 26.5 GHz Typical Applications Features
This HmC962lC4 is ideal for: low Noise figure: 2.5 dB T • Point-to-Point Radios Gain: 13 dB m • Point-to-Multi-Point Radios p1dB output power: 13 dBm s • Military & Space single supply Voltage: +3.5V @ 70mA e - • Test Instrumentation output ip3: +23 dBm is 50 ohm matched input/output o 24 lead 4x4 mm smT package: 16mm² w N
Functional Diagram General Description
lo The HmC962lC4 is a self-biased GaAs mmiC low Noise Amplifier housed in a leadless 4x4 mm ceramic s - surface mount package. The amplifier operates r between 7.5 and 26.5 GHz, providing 13 dB of small ie signal gain, 2.5 dB noise figure, and output ip3 of +23 dBm, while requiring only 70 mA from a +3.5 V lif supply. The p1dB output power of +13 dBm enables p the lNA to function as a lo driver for balanced, i/Q m or image reject mixers. The HmC962lC4 also fe- A atures i/os that are DC blocked and internal y mat- ched to 50 ohms, making it ideal for high capacity microwave radios and VsAT applications.
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 70 mA A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 7.5 - 10 10 - 24 24 - 26.5 GHz Gain 10 12 10 13 8 10 dB Gain Variation over Temperature 0.027 0.024 0.024 dB / °C Noise figure [1] 2.5 3.7 2.5 3 2.7 3.7 dB input return loss 13 10 7 dB output return loss 10 12 11 dB output power for 1 dB Compression 10 12 13 dBm saturated output power (psat) 14 15 15 dBm output Third order intercept (ip3) 22 23 25 dBm supply Current (idd) 70 95 70 95 70 95 mA (Vdd = 3.5V, Vgg1 = Vgg2 = open) [1] Board loss subtracted out. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D