Datasheet HMC903 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | 6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| 页数 / 页 | 13 / 4 — HMC903. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 212 Kb |
| 文件语言 | 英语 |
HMC903. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. ESD CAUTION
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HMC903 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational RF Input Power 20 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 175°C Continuous Power Dissipation, PDISS (T = 0.62 W
ESD CAUTION
85°C, Derate 6.9 mW/°C Above 85°C) Thermal Resistance (Channel to Die Bottom) 144.8°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C Electrostatic Discharge (ESD) Sensitivity, Class 0, passed 150 V Human Body Model (HBM) Rev. C | Page 4 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational RF Input Power 20 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 175°C Continuous Power Dissipation, PDISS (T = 0.62 W
ESD CAUTION
85°C, Derate 6.9 mW/°C Above 85°C) Thermal Resistance (Channel to Die Bottom) 144.8°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C Electrostatic Discharge (ESD) Sensitivity, Class 0, passed 150 V Human Body Model (HBM) Rev. C | Page 4 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE