Datasheet HMC902LP3E (Analog Devices)

5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet HMC902LP3E FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.8 dB typical HMC902LP3E High gain: 19.5 dB 1 2 C C DD DD High P1dB output power: 16 dBm typical NI V V NI Single supply: 3.5 V at 80 mA 16 15 14 13 Output IP3: 28 dBm NIC 1 12 NIC 50 Ω matched input/output NIC 2 11 Self biased with optional bias control for quiescent drain NIC control (IDQ) reduction. RF 3 10 IN RFOUT 3 mm × 3 mm, 16-lead LFCSP: 9 mm² GND 4 9 GND APPLICATIONS 5 6 7 8 Point to point radios C 1 2 C PACKAGE NI GG GG NI BASE Point to multi point radios V V
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GND Military and space
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Test instrumentation
Figure 1.
GENERAL DESCRIPTION
The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic The P1dB output power of 16 dBm enables the LNA to function high electron mobility transistor (pHEMT), monolithic microwave as a local oscillator (LO) driver for balanced, I/Q, or image reject integrated circuit (MMIC) low noise amplifier (LNA), which is mixers. The HMC902LP3E also features inputs/outputs that are self biased with optional bias control for IDQ reduction. The dc blocked and internally matched to 50 Ω, making it ideal for HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface high capacity microwave radios and C band, very small aperture mount package. The amplifier operates between 5 GHz and terminal (VSAT) applications. 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply.
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION EVALUATION PRINTED CIRCUIT BOARD (PCB) APPLICATION CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE