Datasheet HMC902 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | 5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| 页数 / 页 | 13 / 4 — HMC902. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. … |
| 修订版 | D |
| 文件格式/大小 | PDF / 274 Kb |
| 文件语言 | 英语 |
HMC902. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. ESD CAUTION
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HMC902 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational Radio Frequency (RF) Input Power 10 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 175°C
ESD CAUTION
Continuous Power Dissipation, PDISS (T = 0.63 W 85°C, Derate 7 mW/°C Above 85°C) Thermal Resistance (Channel to Die Bottom) 143.8°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C Electrostatic Discharge (ESD) Sensitivity, Class 1A, Passed Human Body Model (HBM) 250 V Rev. D | Page 4 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational Radio Frequency (RF) Input Power 10 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 175°C
ESD CAUTION
Continuous Power Dissipation, PDISS (T = 0.63 W 85°C, Derate 7 mW/°C Above 85°C) Thermal Resistance (Channel to Die Bottom) 143.8°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C Electrostatic Discharge (ESD) Sensitivity, Class 1A, Passed Human Body Model (HBM) 250 V Rev. D | Page 4 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE