Datasheet HMC772LC4 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz |
| 页数 / 页 | 6 / 1 — HMC772LC4. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 2 - 12 GHz. Typical … |
| 文件格式/大小 | PDF / 388 Kb |
| 文件语言 | 英语 |
HMC772LC4. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 2 - 12 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Typical Applications Features
This HMC772LC4 is ideal for: Noise Figure: 1.8 dB T • Wideband Communication Systems Gain: 15 dB M • Surveil ance Systems Output IP3: +25 dBm • Point-to-Point Radios P1dB Output Power: +13 dBm E - S • Point-to-Multi-Point Radios 50 Ohm Matched Input/Output IS • Military & Space Supply Voltage: +4V @ 45 mA O • Test Instrumentation 24 Lead Ceramic 4x4mm SMT Package: 16mm²
Functional Diagram General Description
W N O The HMC772LC4 is a GaAs MMIC HEMT Low Noise Wideband Amplifier which operates between 2 and 12 GHz. The amplifier provides 15 dB of gain, 1.8 dB S - L noise figure up to 12 GHz and output IP3 of +25 dBm, R while requiring only 45 mA from a +4V supply voltage. IE The Psat output power of up to +15 dBm enables the LNA to function as a LO driver for many of HIttite’s LIF balanced, I/Q or image reject mixers. The HMC772LC4 P also features I/Os that are DC blocked and internal y M matched to 50 Ohms, making it ideal for SMT based A high capacity microwave radio applications. The HMC772LC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.
Electrical Specifications, T = +25° C, Vdd= +4V, Idd = 45 mA* A
Parameter Min. Typ. Max. Units Frequency Range 2 - 12 GHz Gain 14 15 dB Gain Variation over Temperature 0.01 dB / °C Noise Figure 1.8 2.5 dB Input Return Loss 15 dB Output Return Loss 15 dB Output Power for 1 dB Compression 13 dBm Output Third Order Intercept (IP3) 25 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)* 45 mA * Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical. I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D
v02.0514
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Typical Applications Features
This HMC772LC4 is ideal for: Noise Figure: 1.8 dB T • Wideband Communication Systems Gain: 15 dB M • Surveil ance Systems Output IP3: +25 dBm • Point-to-Point Radios P1dB Output Power: +13 dBm E - S • Point-to-Multi-Point Radios 50 Ohm Matched Input/Output IS • Military & Space Supply Voltage: +4V @ 45 mA O • Test Instrumentation 24 Lead Ceramic 4x4mm SMT Package: 16mm²
Functional Diagram General Description
W N O The HMC772LC4 is a GaAs MMIC HEMT Low Noise Wideband Amplifier which operates between 2 and 12 GHz. The amplifier provides 15 dB of gain, 1.8 dB S - L noise figure up to 12 GHz and output IP3 of +25 dBm, R while requiring only 45 mA from a +4V supply voltage. IE The Psat output power of up to +15 dBm enables the LNA to function as a LO driver for many of HIttite’s LIF balanced, I/Q or image reject mixers. The HMC772LC4 P also features I/Os that are DC blocked and internal y M matched to 50 Ohms, making it ideal for SMT based A high capacity microwave radio applications. The HMC772LC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.
Electrical Specifications, T = +25° C, Vdd= +4V, Idd = 45 mA* A
Parameter Min. Typ. Max. Units Frequency Range 2 - 12 GHz Gain 14 15 dB Gain Variation over Temperature 0.01 dB / °C Noise Figure 1.8 2.5 dB Input Return Loss 15 dB Output Return Loss 15 dB Output Power for 1 dB Compression 13 dBm Output Third Order Intercept (IP3) 25 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)* 45 mA * Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical. I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D