Datasheet HMC639ST89, 639ST89E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | High IP3, Low Noise Amplifier, 0.2 - 4.0 GHz |
| 页数 / 页 | 6 / 1 — HMC639ST89 / 639ST89E. HIGH IP3, LOW NOISE. AMPLIFIER, 0.2 - 4.0 GHz. … |
| 文件格式/大小 | PDF / 354 Kb |
| 文件语言 | 英语 |
HMC639ST89 / 639ST89E. HIGH IP3, LOW NOISE. AMPLIFIER, 0.2 - 4.0 GHz. Typical Applications. Features. Functional Diagram
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HMC639ST89 / 639ST89E
v03.0810
HIGH IP3, LOW NOISE AMPLIFIER, 0.2 - 4.0 GHz Typical Applications Features
The HMC639ST89(E) is ideal for: Low Noise Figure: 2.3 dB • Cel ular / PCS / 3G High P1dB Output Power: +22 dBm • WiMAX, WiBro, & Fixed Wireless High Output IP3: +38 dBm • CATV & Cable Modem Gain: 13 dB 9 • Microwave Radio 50 Ohm I/O’s - No External Matching • IF and RF Sections Industry Standard SOT89 Package T
Functional Diagram General Description
M The HMC639ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier R - S covering 0.2 to 4.0 GHz. Packaged in an industry E standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, W a Low Noise Amplifier, or a Gain Block with up to O +22 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The R & P internal y matched topology permits this amplifier to A be readily ported between virtual y any printed circuit E board material, regardless of its dielectric constant, IN thickness, or composition. S - L R IE
Electrical Specifications, Vs= 5V, T = +25° C A
LIF P Parameter Min Typ. Max Min. Typ. Max. Units M Frequency Range 0.7 - 2.2 0.2 - 4.0 GHz A Gain 10 13 6 10 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 dB/ °C Input Return Loss 12 12 dB Output Return Loss 12 14 dB Reverse Isolation 20 20 dBm Output Power for 1 dB Compression (P1dB) 19 21 20 22 dB Output Third Order Intercept (IP3) 35 38 35 38 dBm Noise Figure 2.3 2.5 dB Supply Current (Icq) 90 110 120 90 110 120 mA Note: Data taken with broadband bias tee on device output. Inf F or o m rat ip o r n ifc ur e n ,is hd e e d lbiv y e Anry alo a g n D d evi cto es ips la beclie ev eo d rtd o e b r e sa: ccH ur iattte itaen M d reliic a r bl o e w . H a o v weev eC r, o n r o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other poration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No Or P d hoe n r e O : 7 n- 81-li 3 n 2 e 9- a 4 t 7 0 www 0 • O . rdh e itt r o it n e li . n co e a m
9 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 p p liocra t ia o pp n S s u @ p h por ittti : Pte. ho c n o e m : 1-800-ANALOG-D
v03.0810
HIGH IP3, LOW NOISE AMPLIFIER, 0.2 - 4.0 GHz Typical Applications Features
The HMC639ST89(E) is ideal for: Low Noise Figure: 2.3 dB • Cel ular / PCS / 3G High P1dB Output Power: +22 dBm • WiMAX, WiBro, & Fixed Wireless High Output IP3: +38 dBm • CATV & Cable Modem Gain: 13 dB 9 • Microwave Radio 50 Ohm I/O’s - No External Matching • IF and RF Sections Industry Standard SOT89 Package T
Functional Diagram General Description
M The HMC639ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier R - S covering 0.2 to 4.0 GHz. Packaged in an industry E standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, W a Low Noise Amplifier, or a Gain Block with up to O +22 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The R & P internal y matched topology permits this amplifier to A be readily ported between virtual y any printed circuit E board material, regardless of its dielectric constant, IN thickness, or composition. S - L R IE
Electrical Specifications, Vs= 5V, T = +25° C A
LIF P Parameter Min Typ. Max Min. Typ. Max. Units M Frequency Range 0.7 - 2.2 0.2 - 4.0 GHz A Gain 10 13 6 10 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 dB/ °C Input Return Loss 12 12 dB Output Return Loss 12 14 dB Reverse Isolation 20 20 dBm Output Power for 1 dB Compression (P1dB) 19 21 20 22 dB Output Third Order Intercept (IP3) 35 38 35 38 dBm Noise Figure 2.3 2.5 dB Supply Current (Icq) 90 110 120 90 110 120 mA Note: Data taken with broadband bias tee on device output. Inf F or o m rat ip o r n ifc ur e n ,is hd e e d lbiv y e Anry alo a g n D d evi cto es ips la beclie ev eo d rtd o e b r e sa: ccH ur iattte itaen M d reliic a r bl o e w . H a o v weev eC r, o n r o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other poration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No Or P d hoe n r e O : 7 n- 81-li 3 n 2 e 9- a 4 t 7 0 www 0 • O . rdh e itt r o it n e li . n co e a m
9 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 p p liocra t ia o pp n S s u @ p h por ittti : Pte. ho c n o e m : 1-800-ANALOG-D