Datasheet HMC-AUH312 (Analog Devices) - 9
| 制造商 | Analog Devices |
| 描述 | 0.5 GHz to 80 GHz, GaAs, HEMT, MMIC, Low Noise Wideband Amplifier |
| 页数 / 页 | 17 / 9 — Data Sheet. HMC-AUH312. +85°C +25°C –55°C. dB (. E R. Bm). FIGU. 3 (. … |
| 修订版 | F |
| 文件格式/大小 | PDF / 473 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC-AUH312. +85°C +25°C –55°C. dB (. E R. Bm). FIGU. 3 (. OIS. +85°C. +25°C –55°C. 10 15 20 25 30 35 40 45 50 55 60 65 70 75
该数据表的模型线
文件文字版本
Data Sheet HMC-AUH312 12 27 +85°C +25°C –55°C 25 10 23 ) 8 dB ( 21 E R Bm) 6 d 19 FIGU 3 ( E IP 17 OIS 4 N 15 2 +85°C 13 +25°C –55°C 0 11 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
014
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
017
FREQUENCY (GHz)
13476-
FREQUENCY (GHz)
13476- Figure 14. Noise Figure Figure 17. Output IP3 vs. Frequency at Various Temperatures, POUT = 0 dBm per Tone
0 0.50 +85°C +25°C –10 –55°C –20 ) 0.45 (W ) N –30 dB IO ( T PA –40 TION 0.40 ISSI D OLA –50 IS ER W –60 PO 0.35 2GHz 10GHz 20GHz –70 30GHz 40GHz –80 0.30 0 10 20 30 40 50 60 70 80
015
–10 –8 –6 –4 –2 0 2 4 6 8 10 12
018
FREQUENCY (GHz)
13476-
INPUT POWER (dBm)
13476- Figure 15. Reverse Isolation vs. Frequency at Various Temperatures Figure 18. Power Dissipation at 85°C
50 Bc) 40 d C ( NI O 30 R HARM 20 RDE O ND- CO 10 E +85°C S +25°C –55°C 0 0 4 8 12 16 20 24
016
FREQUENCY (GHz)
13476- Figure 16. Second-Order Harmonic vs. vs. Frequency at Various Temperatures, POUT = 2 dBm Rev. F | Page 9 of 10 Document Outline Features Applications Functional Block Diagram General Description Table of Contents Revision History Specifications 0.5 GHz to 60 GHz Frequency Range 60 GHz to 80 GHz Frequency Range Recommended Operating Conditions Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Applications Overview Device Mounting Device Operation Device Power-Up Instructions Device Power-Down Instructions Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs Handling Precautions Opening the Protective Packaging Storage Cleanliness Static Sensitivity Transients General Handling Mounting Techniques Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide
014
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
017
FREQUENCY (GHz)
13476-
FREQUENCY (GHz)
13476- Figure 14. Noise Figure Figure 17. Output IP3 vs. Frequency at Various Temperatures, POUT = 0 dBm per Tone
0 0.50 +85°C +25°C –10 –55°C –20 ) 0.45 (W ) N –30 dB IO ( T PA –40 TION 0.40 ISSI D OLA –50 IS ER W –60 PO 0.35 2GHz 10GHz 20GHz –70 30GHz 40GHz –80 0.30 0 10 20 30 40 50 60 70 80
015
–10 –8 –6 –4 –2 0 2 4 6 8 10 12
018
FREQUENCY (GHz)
13476-
INPUT POWER (dBm)
13476- Figure 15. Reverse Isolation vs. Frequency at Various Temperatures Figure 18. Power Dissipation at 85°C
50 Bc) 40 d C ( NI O 30 R HARM 20 RDE O ND- CO 10 E +85°C S +25°C –55°C 0 0 4 8 12 16 20 24
016
FREQUENCY (GHz)
13476- Figure 16. Second-Order Harmonic vs. vs. Frequency at Various Temperatures, POUT = 2 dBm Rev. F | Page 9 of 10 Document Outline Features Applications Functional Block Diagram General Description Table of Contents Revision History Specifications 0.5 GHz to 60 GHz Frequency Range 60 GHz to 80 GHz Frequency Range Recommended Operating Conditions Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Applications Overview Device Mounting Device Operation Device Power-Up Instructions Device Power-Down Instructions Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs Handling Precautions Opening the Protective Packaging Storage Cleanliness Static Sensitivity Transients General Handling Mounting Techniques Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide