Datasheet HMC-ALH509 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT LOW NOISE AMPLIFIER 71 - 86 GHz |
| 页数 / 页 | 6 / 1 — HMC-ALH509. GaAs HEMT LOW NOISE AMPLIFIER. 71 - 86 GHz. Typical … |
| 文件格式/大小 | PDF / 297 Kb |
| 文件语言 | 英语 |
HMC-ALH509. GaAs HEMT LOW NOISE AMPLIFIER. 71 - 86 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC-ALH509
v05.0713
GaAs HEMT LOW NOISE AMPLIFIER 71 - 86 GHz Typical Applications Features
This HmC-AlH509 is ideal for: Noise figure: 5 dB ip • short Haul / High Capacity links p1dB: +7 dBm H • Automotive radar Gain: 14 dB C • e-Band Communication systems supply Voltage: +2V - • Test & measurement 50 Ohm matched input/Output s r Die size: 3.20 x 1.60 x 0.1 mm ie lif p m
Functional Diagram General Description
A The HmC-AlH509 is a three stage GaAs HemT mmiC low Noise Amplifier (lNA) which operates between 71 and 86 GHz. The HmC-AlH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metal ized. This versatile lNA is compatible with conventional die attach methods, as wel as thermocompression and thermosonic wire bonding, making it ideal for mCm and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with rf probes.
Electrical Specifications, T = +25° C, Vdd = 2V* A
parameter min. Typ. max. Units frequency range 71 - 86 GHz Gain 12 14 dB Noise figure 5 dB input return loss 14 dB Output return loss 10 dB Output power for 1 dB Compression (p1dB) 7 dBm supply Current (idd)(Vdd=2V, Vgg= -0.2V Typ.) 50 mA *Unless otherwise indicated, all measurements are from probed die Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D
v05.0713
GaAs HEMT LOW NOISE AMPLIFIER 71 - 86 GHz Typical Applications Features
This HmC-AlH509 is ideal for: Noise figure: 5 dB ip • short Haul / High Capacity links p1dB: +7 dBm H • Automotive radar Gain: 14 dB C • e-Band Communication systems supply Voltage: +2V - • Test & measurement 50 Ohm matched input/Output s r Die size: 3.20 x 1.60 x 0.1 mm ie lif p m
Functional Diagram General Description
A The HmC-AlH509 is a three stage GaAs HemT mmiC low Noise Amplifier (lNA) which operates between 71 and 86 GHz. The HmC-AlH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metal ized. This versatile lNA is compatible with conventional die attach methods, as wel as thermocompression and thermosonic wire bonding, making it ideal for mCm and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with rf probes.
Electrical Specifications, T = +25° C, Vdd = 2V* A
parameter min. Typ. max. Units frequency range 71 - 86 GHz Gain 12 14 dB Noise figure 5 dB input return loss 14 dB Output return loss 10 dB Output power for 1 dB Compression (p1dB) 7 dBm supply Current (idd)(Vdd=2V, Vgg= -0.2V Typ.) 50 mA *Unless otherwise indicated, all measurements are from probed die Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D