Datasheet HMC-ALH445 (Analog Devices) - 5

制造商Analog Devices
描述GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
页数 / 页6 / 5 — HMC-ALH445. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 18 - 40 GHz. Mounting …
文件格式/大小PDF / 337 Kb
文件语言英语

HMC-ALH445. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 18 - 40 GHz. Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

HMC-ALH445 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

该数据表的模型线

文件文字版本

HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with 0.102mm (0.004”) Thick GaAs MMIC IP conductive epoxy (see HMC general Handling, Mounting, Bonding Note). H 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond 0.076mm thin fi lm substrates are recommended for bringing RF to and from the chip (0.003”) (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be E - C used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accom- IS plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) RF Ground Plane thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in 0.127mm (0.005”) Thick Alumina W NO order to minimize bond wire length. Typical die-to-substrate spacing is Thin Film Substrate O 0.076mm to 0.152 mm (3 to 6 mils). Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC S - L R
Storage:
All bare die are placed in either Waffle or Gel based ESD pro- Wire Bond tective containers, and then sealed in an ESD protective bag for shipment. 0.076mm IE Once the sealed ESD protective bag has been opened, all die should be (0.003”) IF stored in a dry nitrogen environment. L
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt P to clean the chip using liquid cleaning systems. RF Ground Plane M
Static Sensitivity:
Follow ESD precautions to protect against ESD A strikes. 0.150mm (0.005”) Thick Moly Tab
Transients:
Suppress instrument and bias supply transients while bias is 0.254mm (0.010”) Thick Alumina applied. Use shielded signal and bias cables to minimize inductive pick- Thin Film Substrate up. Figure 2.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Infor F m o ati r pr on fu irc n e, de ished b l y iv Anealroyg a D n evid to p ces is b lealic ev e o ed t rde o be ras cc: H urat it e taitne M d relia icr ble. ow Ho a we vve C er, n o o rpFo o rr aptriio c n e , 2 de0li A verlpha R y, and t o o ad, C place h o e rdlm er s s: fo A rd, MA 01 nalog Devic 8 e 2 s, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 196
Phone: 978-250-3343 Fax: 978-250-3373 O Ph rde one r O : 7 n 81- - 3 li 2 n 9-e a 470 t ww 0 • O w rd . e hi r ott nlite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plicat r app ion Sups@ por h t it : Ptite hon .c e o : 1 m -800-ANALOG-D