Datasheet HMC-ALH444 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| 页数 / 页 | 6 / 4 — HMC-ALH444. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 1 - 12 GHz. Pad … |
| 文件格式/大小 | PDF / 518 Kb |
| 文件语言 | 英语 |
HMC-ALH444. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 1 - 12 GHz. Pad Descriptions. 1 - 4
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HMC-ALH444
v04.0417
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled IP 1 RFIN and matched to 50 Ohms. H This pad is AC coupled 2 RFOUT and matched to 50 Ohms. E - C IS Power Supply Voltage for the amplifier. See assembly for 3 Vdd required external components. O W N Gate control for amplifier. Please follow “MMIC Amplifier Bias- O 4, 5 Vgg1, Vgg2 ing Procedure” application note. See assembly for required external components. S - L Die bottom GND Die bottom must be connected to RF/DC ground. R IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
1 - 4
Application Support: Phone: 1-800-ANALOG-D
v04.0417
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled IP 1 RFIN and matched to 50 Ohms. H This pad is AC coupled 2 RFOUT and matched to 50 Ohms. E - C IS Power Supply Voltage for the amplifier. See assembly for 3 Vdd required external components. O W N Gate control for amplifier. Please follow “MMIC Amplifier Bias- O 4, 5 Vgg1, Vgg2 ing Procedure” application note. See assembly for required external components. S - L Die bottom GND Die bottom must be connected to RF/DC ground. R IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
1 - 4
Application Support: Phone: 1-800-ANALOG-D