Datasheet HMC-ALH376 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz |
| 页数 / 页 | 6 / 1 — HMC-ALH376. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 35 - 45 GHz. Typical … |
| 文件格式/大小 | PDF / 261 Kb |
| 文件语言 | 英语 |
HMC-ALH376. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 35 - 45 GHz. Typical Applications. Features. Functional Diagram
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HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz
1
Typical Applications Features
This HMC-ALH376 is ideal for: Noise Figure: 2 dB IP • Point-to-Point Radios Gain: 16 dB @ 40 GHz H • Point-to-Multi-Point Radios P1dB Output Power: +6 dBm C • Test Equipment & Sensors Supply Voltage: +4V @ 87 mA - • Military & Space Die Size: 2.7 x 1.44 x 0.1 mm RS IE IF L P
Functional Diagram General Description
M The HMC-ALH376 is a GaAs MMIC HEMT three A stages, self-biased Low Noise Amplifi er die E which operates between 35 and 45 GHz. The IS amplifi er provides 16 dB of gain, a 2 dB noise O fi gure and +6 dBm of output power at 1 dB gain N compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integ- W ration into hybrid assemblies or Multi-Chip-Modules O L (MCMs) due to its small size (3.9 mm2).
Electrical Specifi cations*, T = +25° C, Vdd= +4V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 35 - 40 40 - 45 GHz Gain 15 16 10 12 dB Noise Figure 2 3 2.2 3 dB Input Return Loss 10 17 dB Output Return Loss 16 18 dB Output Power for 1 dB Compression 6 6 dBm Supply Current (Idd) (Vdd= +4V) 87 87 mA *Unless otherwise indicated, all measurements are from probed die Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 168
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz
1
Typical Applications Features
This HMC-ALH376 is ideal for: Noise Figure: 2 dB IP • Point-to-Point Radios Gain: 16 dB @ 40 GHz H • Point-to-Multi-Point Radios P1dB Output Power: +6 dBm C • Test Equipment & Sensors Supply Voltage: +4V @ 87 mA - • Military & Space Die Size: 2.7 x 1.44 x 0.1 mm RS IE IF L P
Functional Diagram General Description
M The HMC-ALH376 is a GaAs MMIC HEMT three A stages, self-biased Low Noise Amplifi er die E which operates between 35 and 45 GHz. The IS amplifi er provides 16 dB of gain, a 2 dB noise O fi gure and +6 dBm of output power at 1 dB gain N compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integ- W ration into hybrid assemblies or Multi-Chip-Modules O L (MCMs) due to its small size (3.9 mm2).
Electrical Specifi cations*, T = +25° C, Vdd= +4V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 35 - 40 40 - 45 GHz Gain 15 16 10 12 dB Noise Figure 2 3 2.2 3 dB Input Return Loss 10 17 dB Output Return Loss 16 18 dB Output Power for 1 dB Compression 6 6 dBm Supply Current (Idd) (Vdd= +4V) 87 87 mA *Unless otherwise indicated, all measurements are from probed die Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 168
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D