Datasheet HMC-ALH313 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz |
| 页数 / 页 | 6 / 4 — HMC-ALH313. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 27 - 33 GHz. Pad … |
| 文件格式/大小 | PDF / 271 Kb |
| 文件语言 | 英语 |
HMC-ALH313. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 27 - 33 GHz. Pad Descriptions. 1 - 153
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HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN IP and matched to 50 Ohms. H This pad is AC coupled 2 RFOUT and matched to 50 Ohms. C - Power Supply Voltage for the amplifi er. See assembly for 3 Vdd required external components. RS IE Gate control for amplifi er. Please follow “MMIC Amplifi er Bias- 4 Vgg ing Procedure” application note. See assembly for required IF external components. L P M Die bottom GND Die bottom must be connected to RF/DC ground. A E IS O N W O L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
1 - 153
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN IP and matched to 50 Ohms. H This pad is AC coupled 2 RFOUT and matched to 50 Ohms. C - Power Supply Voltage for the amplifi er. See assembly for 3 Vdd required external components. RS IE Gate control for amplifi er. Please follow “MMIC Amplifi er Bias- 4 Vgg ing Procedure” application note. See assembly for required IF external components. L P M Die bottom GND Die bottom must be connected to RF/DC ground. A E IS O N W O L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
1 - 153
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D