Datasheet HMC-ALH310 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz |
| 页数 / 页 | 6 / 3 — HMC-ALH310. GaAs HEMT LOW NOISE. AMPLIFIER, 37 - 42 GHz. Absolute Maximum … |
| 文件格式/大小 | PDF / 273 Kb |
| 文件语言 | 英语 |
HMC-ALH310. GaAs HEMT LOW NOISE. AMPLIFIER, 37 - 42 GHz. Absolute Maximum Ratings. Outline Drawing. Die Packaging Information
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HMC-ALH310
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage +5 Vdc IP Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE H RF Input Power -5 dBm OBSERVE HANDLING PRECAUTIONS C Thermal Resistance 137.8 °C/W - (channel to die bottom) Storage Temperature -65 to +150 °C RS Operating Temperature -55 to +85 °C IE IF L P M A E
Outline Drawing
IS O N W O L
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. GP-5 (Gel Pack) [2] 3. BACKSIDE METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 4. BACKSIDE METAL IS GROUND. packaging dimensions. 5. BOND PAD METALLIZATION: GOLD. [2] For alternate packaging information contact Hittite 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Microwave Corporation. 7. OVERALL DIE SIZE ±.002” Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 140
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage +5 Vdc IP Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE H RF Input Power -5 dBm OBSERVE HANDLING PRECAUTIONS C Thermal Resistance 137.8 °C/W - (channel to die bottom) Storage Temperature -65 to +150 °C RS Operating Temperature -55 to +85 °C IE IF L P M A E
Outline Drawing
IS O N W O L
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. GP-5 (Gel Pack) [2] 3. BACKSIDE METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 4. BACKSIDE METAL IS GROUND. packaging dimensions. 5. BOND PAD METALLIZATION: GOLD. [2] For alternate packaging information contact Hittite 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Microwave Corporation. 7. OVERALL DIE SIZE ±.002” Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 140
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D