Datasheet HMC562 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz |
| 页数 / 页 | 8 / 1 — HMC562. GaAs PHEMT MMIC WIDEBAND. DRIVER AMPLIFIER, 2 - 35 GHz. Typical … |
| 文件格式/大小 | PDF / 403 Kb |
| 文件语言 | 英语 |
HMC562. GaAs PHEMT MMIC WIDEBAND. DRIVER AMPLIFIER, 2 - 35 GHz. Typical Applications. Features. Functional Diagram
该数据表的模型线
文件文字版本
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Typical Applications Features
2 The HMC562 wideband driver is ideal for: P1dB Output Power: +18 dBm • Military & Space Gain: 12.5 dB • Test Instrumentation Output IP3: +27 dBm IP • Fiber Optics Supply Voltage: +8V @ 80 mA H 50 Ohm Matched Input/Output - C Die Size: 3.12 x 1.42 x 0.1 mm S R IE
Functional Diagram General Description
IF The HMC562 is a GaAs MMIC PHEMT Distributed L Driver Amplifi er die which operates between 2 and P 35 GHz. The amplifi er provides 12.5 dB of gain, M +19 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA K A from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifi er applications. The OC HMC562 amplifi er I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into Multi- BL Chip-Modules (MCMs). All data is taken with the chip IN connected via two 0.075mm (3 mil) ribbon bonds of A minimal length 0.31mm (12 mils). & G R E IV R
Electrical Specifi cations, T = +25° C, Vdd= +8V, Idd= 80 mA* A
D Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 15.0 15.0 - 27.0 27.0 - 35.0 GHz Gain 9.5 12.5 8.5 12 7 10 dB Gain Flatness ±0.4 ±0.35 ±1.3 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 0.02 0.03 dB/ °C Input Return Loss 14 13 10 dB Output Return Loss 16 15 12 dB Output Power for 1 dB Compression (P1dB) 15 18 14 17 10 14 dBm Saturated Output Power (Psat) 21.5 20 16 dBm Output Third Order Intercept (IP3) 27 24 22 dBm Noise Figure 3 3.5 5 dB Supply Current 80 100 80 100 80 100 mA (Idd) (Vdd= 8V, Vgg = -0.8V Typ.) * Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 34
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v04.1108
GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Typical Applications Features
2 The HMC562 wideband driver is ideal for: P1dB Output Power: +18 dBm • Military & Space Gain: 12.5 dB • Test Instrumentation Output IP3: +27 dBm IP • Fiber Optics Supply Voltage: +8V @ 80 mA H 50 Ohm Matched Input/Output - C Die Size: 3.12 x 1.42 x 0.1 mm S R IE
Functional Diagram General Description
IF The HMC562 is a GaAs MMIC PHEMT Distributed L Driver Amplifi er die which operates between 2 and P 35 GHz. The amplifi er provides 12.5 dB of gain, M +19 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA K A from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifi er applications. The OC HMC562 amplifi er I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into Multi- BL Chip-Modules (MCMs). All data is taken with the chip IN connected via two 0.075mm (3 mil) ribbon bonds of A minimal length 0.31mm (12 mils). & G R E IV R
Electrical Specifi cations, T = +25° C, Vdd= +8V, Idd= 80 mA* A
D Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 15.0 15.0 - 27.0 27.0 - 35.0 GHz Gain 9.5 12.5 8.5 12 7 10 dB Gain Flatness ±0.4 ±0.35 ±1.3 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 0.02 0.03 dB/ °C Input Return Loss 14 13 10 dB Output Return Loss 16 15 12 dB Output Power for 1 dB Compression (P1dB) 15 18 14 17 10 14 dBm Saturated Output Power (Psat) 21.5 20 16 dBm Output Third Order Intercept (IP3) 27 24 22 dBm Noise Figure 3 3.5 5 dB Supply Current 80 100 80 100 80 100 mA (Idd) (Vdd= 8V, Vgg = -0.8V Typ.) * Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 34
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D