Datasheet HMC463LH250 (Analog Devices)

制造商Analog Devices
描述GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
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HMC463LH250. GaAs pHEMT MMIC LOW NOISE. AGC AMPLIFIER, 2 - 20 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC463LH250 Analog Devices

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HMC463LH250
v06.1217
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC463LH250 is ideal for: 50 Ohm Matched Input/Output T • Telecom Infrastructure Hermetic SMT Package M • Microwave Radio & VSAT Gain: 14 dB • Military EW, ECM & C3I Noise Figure: 2.5 dB @ Mid-Band E - S • Test Instrumentation P1dB Output Power: +18 dBm @ Mid-Band IS • Fiber Optics Supply Voltage: +5V @ 60mA O Screening to MIL-PRF-38535 (Class B or S) Available W N
Functional Diagram General Description
O The HMC463LH250 is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a hermetic surface mount package which operates S - L between 2 and 20 GHz. The amplifier provides 13 R dB of gain, 3 dB noise figure and 18 dBm of output IE power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias LIF (Vgg2) is provided to al ow Adjustable Gain Control P (AGC) of 8 dB typical. Gain flatness is excel ent at M ±0.5 dB from 2 - 14 GHz making the HMC463LH250 A ideal for EW, ECM RADAR, test equipment and High-Reliability applications. The HMC463LH250 LNA I/Os are internal y matched to 50 Ohms and are internally DC blocked.
Electrical Specifications, T = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 GHz Gain 11.5 14.5 9 12 8 11 dB Gain Flatness ±0.25 ±0.5 ±0.9 dB Gain Variation Over Temperature 0.010 0.010 0.010 dB/ °C Noise Figure 3.5 5.5 2.5 4.5 4 5.5 dB Input Return Loss 15 15 9 dB Output Return Loss 11 15 7 dB Output Power for 1 dB Compression (P1dB) 16 19 13 18 10 13 dBm Saturated Output Power (Psat) 21.5 20.5 19 dBm Output Third Order Intercept (IP3) 29 27 24 dBm Supply Current 60 80 60 80 60 80 mA (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) * Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical. Info f rm r a m tion f n ur u n r ishe h d e b d y b A y na n log o D g ev e i v ce c s e i s s b s eliev e e v d e t d o t b o e a e cc c u c r u a r te t a e nd n r d elia i b a le. e H . ow o e w v e e v r, r n , o For pr r p irce c , d e e , d live v r e y, a y nd t n o p d t l o p a l ce o c rd r e d r e s: A s na n log D o ev e i v ce c s e , Inc. c , . , res e p s onsib i ility is as s a sum u ed b e y A d b na n log D o ev e i v ce c s f e o s f r its us s u e s , n e or fo r f r any i n nf n r f irng n e g ments of pa f p te t nts or othe h r One T n e e T ch c nolog o y W g a y W y a , P y . , P O . B O ox 9 o 1 x 9 0 1 6, Norwo w od o , M d A 0 , M 2062- 2 91 9 0 1 6
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