Datasheet HMC462LP5, 462LP5E (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 6 / 3 — HMC462LP5 / 462LP5E. GAAS PHEMT MMIC. LOW NOISE AMPLIFIER, 2 - 20 GHz. … |
| 文件格式/大小 | PDF / 378 Kb |
| 文件语言 | 英语 |
HMC462LP5 / 462LP5E. GAAS PHEMT MMIC. LOW NOISE AMPLIFIER, 2 - 20 GHz. P1dB vs. Temperature. Psat vs. Temperature
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HMC462LP5 / 462LP5E
v05.0213
GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 T 17 17 M 14 14 (dBm) (dBm) E - S 11 P1dB Psat 11 IS 8 8 O 5 5 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) W N +25 C +85 C -40 C O +25 C +85 C -40 C
Gain, Power, Noise Figure & Supply
S - L
Output IP3 vs. Temperature Current vs. Supply Voltage @ 10 GHz
R 30 22 72 IE (dB) 20 70 27 18 68 Figure 16 66 LIF ) 64 24 14 Noise Idd P 62 (dBm 12 (mA) 10 60 M IP3 21 (dBm), 8 58 A P1dB 6 56 18 4 54 (dB), 2 52 15 GAIN 0 50 0 2 4 6 8 10 12 14 16 18 20 22 4.5 5 5.5 FREQUENCY (GHz) Vdd (V) Gain P1dB Noise Figure +25 C +85 C -40 C Idd
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm +4.5 66 Channel Temperature 150 °C +5.0 67 Continuous Pdiss (T = 85 °C) +5.5 68 3.25 W (derate 50 mW/°C above 85 °C) +7.5 71 Thermal Resistance 52 °C/W +8.0 72 (channel to ground paddle) +8.5 73 Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D
v05.0213
GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature Psat vs. Temperature
20 20 T 17 17 M 14 14 (dBm) (dBm) E - S 11 P1dB Psat 11 IS 8 8 O 5 5 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) W N +25 C +85 C -40 C O +25 C +85 C -40 C
Gain, Power, Noise Figure & Supply
S - L
Output IP3 vs. Temperature Current vs. Supply Voltage @ 10 GHz
R 30 22 72 IE (dB) 20 70 27 18 68 Figure 16 66 LIF ) 64 24 14 Noise Idd P 62 (dBm 12 (mA) 10 60 M IP3 21 (dBm), 8 58 A P1dB 6 56 18 4 54 (dB), 2 52 15 GAIN 0 50 0 2 4 6 8 10 12 14 16 18 20 22 4.5 5 5.5 FREQUENCY (GHz) Vdd (V) Gain P1dB Noise Figure +25 C +85 C -40 C Idd
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm +4.5 66 Channel Temperature 150 °C +5.0 67 Continuous Pdiss (T = 85 °C) +5.5 68 3.25 W (derate 50 mW/°C above 85 °C) +7.5 71 Thermal Resistance 52 °C/W +8.0 72 (channel to ground paddle) +8.5 73 Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D