Datasheet HMC372LP3, 372LP3E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz |
| 页数 / 页 | 8 / 1 — HMC372LP3 / 372LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 700 - 1000 … |
| 文件格式/大小 | PDF / 397 Kb |
| 文件语言 | 英语 |
HMC372LP3 / 372LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 700 - 1000 MHz. Typical Applications. Features. Functional Diagram
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HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz
7
Typical Applications Features
T The HMC372LP3 / HMC372LP3E is ideal for Noise Figure: < 1 dB basestation receivers: Output IP3: +34 dBm • GSM, GPRS & EDGE Gain: 15 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature E - SM • Private Land Mobile Radio Single Supply: +5V @ 100 mA IS 50 Ohm Matched Output
Functional Diagram General Description
W NO The HMC372LP3 & HMC372LP3E are GaAs PHEMT O MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers - L operating between 700 and 1000 MHz. The amplifi er S has been optimized to provide 1 dB noise fi gure, 15 R dB gain and +34 dBm output IP3 from a single supply IE of +5V @ 100 mA. Input and output return losses are IF 25 and 14 dB respectively with the LNA requiring only L four external components to optimize the RF Input P match, RF ground and DC bias. For applications M which require improved noise fi gure, please see the A HMC617LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.008 0.015 0.008 0.015 dB / °C Noise Figure 1.0 1.3 1.0 1.3 dB Input Return Loss 25 25 dB Output Return Loss 14 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 18 21 17 20 dBm Saturated Output Power (Psat) 23.5 22.5 dBm Output Third Order Intercept (IP3) 34 30 33 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 100 100 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 52
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz
7
Typical Applications Features
T The HMC372LP3 / HMC372LP3E is ideal for Noise Figure: < 1 dB basestation receivers: Output IP3: +34 dBm • GSM, GPRS & EDGE Gain: 15 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature E - SM • Private Land Mobile Radio Single Supply: +5V @ 100 mA IS 50 Ohm Matched Output
Functional Diagram General Description
W NO The HMC372LP3 & HMC372LP3E are GaAs PHEMT O MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers - L operating between 700 and 1000 MHz. The amplifi er S has been optimized to provide 1 dB noise fi gure, 15 R dB gain and +34 dBm output IP3 from a single supply IE of +5V @ 100 mA. Input and output return losses are IF 25 and 14 dB respectively with the LNA requiring only L four external components to optimize the RF Input P match, RF ground and DC bias. For applications M which require improved noise fi gure, please see the A HMC617LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.008 0.015 0.008 0.015 dB / °C Noise Figure 1.0 1.3 1.0 1.3 dB Input Return Loss 25 25 dB Output Return Loss 14 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 18 21 17 20 dBm Saturated Output Power (Psat) 23.5 22.5 dBm Output Third Order Intercept (IP3) 34 30 33 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 100 100 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 52
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D