Datasheet HMC356LP3, 356LP3E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz |
| 页数 / 页 | 6 / 1 — HMC356LP3 / 356LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 350 - 550 MHz. … |
| 文件格式/大小 | PDF / 406 Kb |
| 文件语言 | 英语 |
HMC356LP3 / 356LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 350 - 550 MHz. Typical Applications. Features. Functional Diagram
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HMC356LP3 / 356LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
7
Typical Applications Features
The HMC356LP3 / HMC356LP3E is ideal for Noise Figure: ≤1.0 dB T basestation receivers: +38 dBm Output IP3 • GSM 450 & GSM 480 Gain: 17 dB • CDMA 450 Very Stable Gain vs. Supply & Temperature E - SM • Private Land Mobile Radio Single Supply: +5V @ 104 mA IS 50 Ohm Matched Output W NO
Functional Diagram General Description
O The HMC356LP3 & HMC356LP3E are high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers - L is ideal for GSM & CDMA cellular basestation and S Mobile Radio front-end receivers operating between R 350 and 550 MHz. This LNA has been optimized to IE provide 1.0 dB noise fi gure, 17 dB gain and +38 dBm IF output IP3 from a single supply of +5V @ 104 mA. L Input and output return losses are 15 dB typical, with P the LNA requiring only four external components to M optimize the RF input match, RF ground and DC bias. A For applications which require improved noise fi gure, please see the HMC616LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Units Frequency Range 350 - 550 MHz Gain 15 17 dB Gain Variation Over Temperature 0.0032 0.010 dB / °C Noise Figure 1.0 1.4 dB Input Return Loss 17 dB Output Return Loss 12 dB Reverse Isolation 24 dB Output Power for 1dB Compression (P1dB) 17 21 dBm Saturated Output Power (Psat) 22.5 dBm Output Third Order Intercept (IP3) 34 38 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 104 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 46
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
7
Typical Applications Features
The HMC356LP3 / HMC356LP3E is ideal for Noise Figure: ≤1.0 dB T basestation receivers: +38 dBm Output IP3 • GSM 450 & GSM 480 Gain: 17 dB • CDMA 450 Very Stable Gain vs. Supply & Temperature E - SM • Private Land Mobile Radio Single Supply: +5V @ 104 mA IS 50 Ohm Matched Output W NO
Functional Diagram General Description
O The HMC356LP3 & HMC356LP3E are high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers - L is ideal for GSM & CDMA cellular basestation and S Mobile Radio front-end receivers operating between R 350 and 550 MHz. This LNA has been optimized to IE provide 1.0 dB noise fi gure, 17 dB gain and +38 dBm IF output IP3 from a single supply of +5V @ 104 mA. L Input and output return losses are 15 dB typical, with P the LNA requiring only four external components to M optimize the RF input match, RF ground and DC bias. A For applications which require improved noise fi gure, please see the HMC616LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Units Frequency Range 350 - 550 MHz Gain 15 17 dB Gain Variation Over Temperature 0.0032 0.010 dB / °C Noise Figure 1.0 1.4 dB Input Return Loss 17 dB Output Return Loss 12 dB Reverse Isolation 24 dB Output Power for 1dB Compression (P1dB) 17 21 dBm Saturated Output Power (Psat) 22.5 dBm Output Third Order Intercept (IP3) 34 38 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 104 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 46
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D