Datasheet HMC263LP4E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
| 页数 / 页 | 7 / 1 — HMC263LP4E. GaAs MMIC LOW NOISE. AMPLIFIER, 24 - 36 GHz. Typical … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
HMC263LP4E. GaAs MMIC LOW NOISE. AMPLIFIER, 24 - 36 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC263LP4E
v02.1017
GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Typical Applications Features
The HmC263lp4e is ideal for: low Noise figure: 2.2 dB T • mil imeterwave point-to-point radios High Gain: 20 dB m • lmDs single positive supply: +3V or +5V s • VsAT DC Blocked rf i/os e - • sATCom No external matching is 24 lead 4x4mm QfN package: 16mm² o
Functional Diagram General Description
w N The HmC263lp4e is a GaAs mmiC low Noise lo Amplifier (lNA) which covers the frequency range s - of 24 to 36 GHz and is housed in a leadless plastic r smT package. The HmC263lp4e utilizes a GaAs pHemT process offering 20 dB gain from a single ie bias supply of + 3V @ 58 mA with a noise figure of 2.2 dB. The HmC263lp4e may be used in conjunc- lif p tion with HmC264lC3B or HmC265lm3 mixers to realize a mil imeterwave system receiver. The rf i/os m are DC blocked and matched to 50 ohms requiring no A external components.
Electrical Specifications, T = +25° C, Vdd = +3V A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 24 - 27 27 - 32 32 - 36 GHz Gain 19 21 27 17 19 23 15 17 20 dB Gain Variation over Temperature 0.03 0.03 0.03 dB/°C Noise figure 2.0 3.0 2.2 3.0 2.5 4.0 dB input return loss 12 9 11 dB output return loss 10 9 9 dB output power for 1 dB Compression (p1dB) 6 8 9 dBm saturated output power (psat) 9 11 12 dBm output Third order intercept (ip3) 16 18 20 dBm supply Current (idd) (@ Vdd = +3V) 58 77 58 77 58 77 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Output IP3 @ Vdd = +5V Output IP3 @ Vdd = +3V Psat @ Vdd = +5V Psat @ Vdd = +3V Output P1dB @ Vdd = +5V Isolation @ Vdd = +5V Isolation @ Vdd = +3V Noise Figure vs. Temperature @ Vdd = +5V Noise Figure vs. Temperature @ Vdd = +3V Output Return Loss @ Vdd = +5V Output Return Loss @ Vdd = +3V Input Return Loss @ Vdd = +5V Input Return Loss @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V Gain vs. Temperature @ Vdd = +3V Output P1dB @ Vdd = +3V Absolute Maximum Ratings Outline Drawing Package Information Pin Description Application Circuit Evaluation PCB List of Materials
v02.1017
GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Typical Applications Features
The HmC263lp4e is ideal for: low Noise figure: 2.2 dB T • mil imeterwave point-to-point radios High Gain: 20 dB m • lmDs single positive supply: +3V or +5V s • VsAT DC Blocked rf i/os e - • sATCom No external matching is 24 lead 4x4mm QfN package: 16mm² o
Functional Diagram General Description
w N The HmC263lp4e is a GaAs mmiC low Noise lo Amplifier (lNA) which covers the frequency range s - of 24 to 36 GHz and is housed in a leadless plastic r smT package. The HmC263lp4e utilizes a GaAs pHemT process offering 20 dB gain from a single ie bias supply of + 3V @ 58 mA with a noise figure of 2.2 dB. The HmC263lp4e may be used in conjunc- lif p tion with HmC264lC3B or HmC265lm3 mixers to realize a mil imeterwave system receiver. The rf i/os m are DC blocked and matched to 50 ohms requiring no A external components.
Electrical Specifications, T = +25° C, Vdd = +3V A
parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 24 - 27 27 - 32 32 - 36 GHz Gain 19 21 27 17 19 23 15 17 20 dB Gain Variation over Temperature 0.03 0.03 0.03 dB/°C Noise figure 2.0 3.0 2.2 3.0 2.5 4.0 dB input return loss 12 9 11 dB output return loss 10 9 9 dB output power for 1 dB Compression (p1dB) 6 8 9 dBm saturated output power (psat) 9 11 12 dBm output Third order intercept (ip3) 16 18 20 dBm supply Current (idd) (@ Vdd = +3V) 58 77 58 77 58 77 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Output IP3 @ Vdd = +5V Output IP3 @ Vdd = +3V Psat @ Vdd = +5V Psat @ Vdd = +3V Output P1dB @ Vdd = +5V Isolation @ Vdd = +5V Isolation @ Vdd = +3V Noise Figure vs. Temperature @ Vdd = +5V Noise Figure vs. Temperature @ Vdd = +3V Output Return Loss @ Vdd = +5V Output Return Loss @ Vdd = +3V Input Return Loss @ Vdd = +5V Input Return Loss @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V Gain vs. Temperature @ Vdd = +3V Output P1dB @ Vdd = +3V Absolute Maximum Ratings Outline Drawing Package Information Pin Description Application Circuit Evaluation PCB List of Materials