Datasheet HMC998A (Analog Devices) - 7

HMC998A
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Gain & Power vs. Idd @ 2 GHz Gain & Power vs. Idd @ 10 GHz
35 35 IP 30 30 H 25 25 20 20 R - C E 15 15 W Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 10 10 O 350 400 450 500 350 400 450 500 Idd (mA) Idd (mA) GAIN P1dB Psat GAIN P1dB Psat R & P A
Low Frequency Output IP3 vs. Temperature
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Gain & Power vs. Idd @ 22 GHz @ Pout/Tone = +18 dBm
50 IN 35 45 30 40 S - L ) 25 R 35 20 IP3 (dBm IE 30 15 25 LIF Gain (dB), P1dB (dBm), Psat (dBm) P 10 20 350 400 450 500 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 M Idd (mA) FREQUENCY (GHz) A +25C +85C -55C GAIN P1dB Psat
Output IP3 vs. Temperature Output IP3 vs. Vdd @ Pout/Tone = +18 dBm @ Pout/Tone= +18 dBm
50 50 45 45 40 ) 40 ) 35 35 IP3 (dBm IP3 (dBm 30 30 25 25 20 20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C +11V +13V +15V +12V +14V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs