HMC998A v03.0918 GaAs pHEMT MMIC2 WATT POWER AMPLIFIER, DC - 22 GHzIdd vs. Vgg1Igg1 vs. Input PowerRepresentative of a Typical Device 0.8 1100 0.6 1000 900 0.4 800 IP 0.2 700 H 0 600 500 -0.2 Igg1 (mA) Idd(mA) 400 -0.4 300 -0.6 200 R - C 100 -0.8 E 0 -1 -100 W 1 3 5 7 9 11 13 15 17 19 21 23 -1.8 -1.5 -1.2 -0.9 -0.6 -0.3 Input Power (dBm) Vgg1(V) O 2GHz 10GHz 16GHz 6GHz 12GHz 18GHz 8GHz 14GHz 22GHz R & P A E IN S - L R IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 10 Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs