Datasheet HMC907A (Analog Devices)

制造商Analog Devices
描述GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
页数 / 页12 / 1 — HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Typical …
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HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Typical Applications. Features. Functional Diagram. General Description

Datasheet HMC907A Analog Devices

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HMC907A
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Applications Features
The HMC907A is ideal for: High P1dB Output Power: +28 dBm IP • Test Instrumentation High Gain: 14 dB H • Military & Space High Output IP3: +41 dBm Single Supply: +10V @ 350 mA R - C 50 Ohm Matched Input/Output E Die Size: 2.92 x 1.35 x 0.1 mm W O
Functional Diagram General Description
R & P The HMC907A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and IA 22 GHz. This self-biased power amplifier provides IN 14 dB of gain, 41 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requir- ing only 350mA from a +10V supply. Gain flatness is S - L excel ent at ±0.7 dB from DC to 12 GHz making the R HMC907A ideal for EW, ECM, Radar and test equip- IE ment applications. The HMC907A amplifier I/Os are internal y matched to 50 Ohms facilitating integration LIF into Mutli-Chip-Modules (MCMs). All data is taken P with the chip connected via two 0.025mm (1 mil) wire M bonds of minimal 0.31 mm (12 mils) length. A
Electrical Specifications, T = +25 °C, Vdd = +10V, Idd = 350mA A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.2 - 8 8 - 16 16 - 22 GHz Gain 12 13.5 12 13.5 12.5 14 dB Gain Flatness ±0.7 ±0.6 ±0.3 dB Gain Variation Over Temperature 0.005 0.004 0.007 dB/ °C Input Return Loss 14 15 15 dB Output Return Loss 13 16 16 dB Output Power for 1 dB Compression (P1dB) 25 28 25.5 28.5 25 28 dBm Saturated Output Power (Psat) 30 30 29 dBm Output Third Order Intercept (IP3) 40 41 41 dBm Pout / tone = +16dBm Output Second Order Intercept (IP2) 41 41 42 dBm Pout / tone =+16dBm Noise Figure 6 3 4 dB Supply Current 350 350 350 mA (Idd) (Vdd= 10V) Supply Voltage 8 10 11 8 10 11 8 10 11 V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs