Datasheet HMC797A (Analog Devices)

HMC797A
v02.0418
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features
The HMC797A is ideal for: High P1dB Output Power: +29 dBm IP • Test Instrumentation High Psat Output Power: +31 dBm H • Military & Space High Gain: 15 dB • Fiber Optics High Output IP3: 41 dBm R - C Supply Voltage: +10 V @ 400 mA E 50 Ohm Matched Input/Output W Die Size: 2.89 x 1.55 x 0.1 mm O
Functional Diagram General Description
The HMC797A is a GaAs MMIC pHEMT Distributed R & P Power Amplifier which operates between DC and 22 A GHz. The amplifier provides 15 dB of gain, +29 dBm E of output power at 1 dB gain compression, +31 dBm of saturated output power, and 23% PAE while requir- IN ing 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797A is ideal for high linear- S - L ity applications in military and space as well as test R equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 IE to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797A amplifier I/Os LIF P are internal y matched to 50 Ohms facilitating integra- tion into Multi-Chip-Modules (MCMs). All data is taken M with the chip connected via two 0.025 mm (1 mil) wire A bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, T = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 10 10 - 18 18 - 22 GHz Gain 13 14.5 13.5 15 14 16 dB Gain Flatness ±0.5 ±0.7 ±0.4 dB Gain Variation Over Temperature 0.007 0.008 0.010 dB/ °C Input Return Loss 15 16 17 dB Output Return Loss 17 17 15 dB Output Power for 1 dB Compression (P1dB) 27 29 27 29 26.5 29 dBm Saturated Output Power (Psat) 31 31 31.5 dBm Output Third Order Intercept (IP3) *Measurement taken at Pout/Tone = + 18 42 41 40 dBm dBm Noise Figure 3.5 3 3.5 dB Supply Current (Idd) 400 400 400 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V *Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical, Vgg1 = -0.6V Typical to achieve Idd = 400 mA. FIo nf r p orm r at iic o e n , d furn e is li h v e e d rby, a y An n al d t og o p Devi la ce ce o s is b red li e ev res: A d to n b a e lo ac g D curat ev e a ic n e d rsel, I ia n bl c e . , O How n e e T ver, e n c o hno F l o og r p y W rice ay , d , P eli . v O er . B y o , anx 9 d t 106 o pl , N ac or e o w rdo e o r d s , M : An A 0 alo 20 g D 6 e 2 vi -c9 e 1 s 06 , Inc., responsibility is assumed by Analog Devices for itPh s u o se ne , no : 78 r fo 1 r an -3 y i 2 nfr 9in-g4e7 m 0 en0 • O ts of pa rtd enetr o s o n r ot lhin er rights of third parties that may result from its use. Specifications subject to change without notice. No e at w On w e T w ec.a h n n a ol loogg.c y Woam y, P.O. Box 9106, Norwood, MA 02062-9106
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license is granted by implication or otherwise under an A y pp atp e lnica t o t r p io at n S ent ri u g p ht p s oor f At: P nalo ho g D n evei: 1 ces - . 800 Ph-A on N e A : 7LO 81- G 3 -2D 9-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs