Datasheet HMC930A (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz |
| 页数 / 页 | 16 / 3 — Data Sheet. HMC930A. ELECTRICAL SPECIFICATIONS DC TO 12 GHz FREQUENCY … |
| 文件格式/大小 | PDF / 270 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC930A. ELECTRICAL SPECIFICATIONS DC TO 12 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol. Test Conditions/Comments
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Data Sheet HMC930A ELECTRICAL SPECIFICATIONS DC TO 12 GHz FREQUENCY RANGE
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE DC 12 GHz GAIN 11.5 13.5 dB Gain Flatness ±0.5 dB Gain Variation Over Temperature 0.01 dB/°C RETURN LOSS Input 18 dB Output 28 dB OUTPUT Output Power for 1 dB Compression P1dB 21 23 dBm Saturated Output Power PSAT 25 dBm Output Third-Order Intercept IP3 36 dBm NOISE FIGURE 4.5 dB SUPPLY CURRENT IDD VDD = 10 V, VGG1 = −0.8 V, typical 175 mA
12 GHz TO 32 GHz FREQUENCY RANGE
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 12 32 GHz GAIN 11 13 dB Gain Flatness ±0.3 dB Gain Variation Over Temperature 0.017 dB/°C RETURN LOSS Input 16 dB Output 20 dB OUTPUT Output Power for 1 dB Compression P1dB 22 dBm Saturated Output Power PSAT 24 dBm Output Third-Order Intercept IP3 33.5 dBm NOISE FIGURE 5 dB SUPPLY CURRENT IDD VDD = 10 V, VGG1 = −0.8 V, typical 175 mA Rev. A | Page 3 of 16 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE DC 12 GHz GAIN 11.5 13.5 dB Gain Flatness ±0.5 dB Gain Variation Over Temperature 0.01 dB/°C RETURN LOSS Input 18 dB Output 28 dB OUTPUT Output Power for 1 dB Compression P1dB 21 23 dBm Saturated Output Power PSAT 25 dBm Output Third-Order Intercept IP3 36 dBm NOISE FIGURE 4.5 dB SUPPLY CURRENT IDD VDD = 10 V, VGG1 = −0.8 V, typical 175 mA
12 GHz TO 32 GHz FREQUENCY RANGE
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 12 32 GHz GAIN 11 13 dB Gain Flatness ±0.3 dB Gain Variation Over Temperature 0.017 dB/°C RETURN LOSS Input 16 dB Output 20 dB OUTPUT Output Power for 1 dB Compression P1dB 22 dBm Saturated Output Power PSAT 24 dBm Output Third-Order Intercept IP3 33.5 dBm NOISE FIGURE 5 dB SUPPLY CURRENT IDD VDD = 10 V, VGG1 = −0.8 V, typical 175 mA Rev. A | Page 3 of 16 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide