Datasheet HMC8205BCHIPS (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | 0.4 GHz to 6 GHz, 35 W, GaN, Power Amplifier |
| 页数 / 页 | 19 / 10 — HMC8205BCHIPS. Data Sheet. +85°C. +25°C –55°C. N (. R G. FREQUENCY (GHz). … |
| 修订版 | A |
| 文件格式/大小 | PDF / 318 Kb |
| 文件语言 | 英语 |
HMC8205BCHIPS. Data Sheet. +85°C. +25°C –55°C. N (. R G. FREQUENCY (GHz). 28V. 40V 45V 50V. 55V. 40V 45V. 50V. 1300mA. 900mA 500mA
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HMC8205BCHIPS Data Sheet 26 26 +85°C 24 24 +25°C –55°C 22 22 B) B) d 20 d 20 N ( N ( AI AI 18 18 R G R G E E W W O 16 O 16 P P 14 14 12 +85°C 12 +25°C –55°C 10 10 0 1 2 3 4 5 6 7
028
0 1 2 3 4 5 6 7
032
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 27. Power Gain vs. Frequency at Various Temperatures, Figure 30. Power Gain vs. Frequency at Various Temperatures, Input Power = 24 dBm Input Power = 28 dBm
24 24 28V 22 22 40V 45V 50V 20 20 55V B) B) d 18 d 18 N ( N ( AI AI 16 16 R G R G E E W W O 14 O 14 P P 28V 12 12 40V 45V 10 50V 10 55V 8 8 0 1 2 3 4 5 6 7
029
0 1 2 3 4 5 6 7
033
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 28. Power Gain vs. Frequency at Various Voltages, Figure 31. Power Gain vs. Frequency at Various Voltages, Input Power = 24 dBm Input Power = 28 dBm
26 26 1300mA 24 24 900mA 500mA 22 22 B) B) d 20 d 20 N ( N ( AI AI 18 18 R G R G E E W W O 16 O 16 P P 14 14 12 1300mA 12 900mA 500mA 10 10 0 1 2 3 4 5 6 7
031
0 1 2 3 4 5 6 7
036
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 29. Power Gain vs. Frequency at Various Quiescent Currents (IDD1 + IDD2), Figure 32. Power Gain vs. Frequency at Various Quiescent Currents (IDD1 + IDD2), Input Power = 24 dBm Input Power = 28 dBm Rev. A | Page 10 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
028
0 1 2 3 4 5 6 7
032
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 27. Power Gain vs. Frequency at Various Temperatures, Figure 30. Power Gain vs. Frequency at Various Temperatures, Input Power = 24 dBm Input Power = 28 dBm
24 24 28V 22 22 40V 45V 50V 20 20 55V B) B) d 18 d 18 N ( N ( AI AI 16 16 R G R G E E W W O 14 O 14 P P 28V 12 12 40V 45V 10 50V 10 55V 8 8 0 1 2 3 4 5 6 7
029
0 1 2 3 4 5 6 7
033
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 28. Power Gain vs. Frequency at Various Voltages, Figure 31. Power Gain vs. Frequency at Various Voltages, Input Power = 24 dBm Input Power = 28 dBm
26 26 1300mA 24 24 900mA 500mA 22 22 B) B) d 20 d 20 N ( N ( AI AI 18 18 R G R G E E W W O 16 O 16 P P 14 14 12 1300mA 12 900mA 500mA 10 10 0 1 2 3 4 5 6 7
031
0 1 2 3 4 5 6 7
036
FREQUENCY (GHz)
13790-
FREQUENCY (GHz)
13790- Figure 29. Power Gain vs. Frequency at Various Quiescent Currents (IDD1 + IDD2), Figure 32. Power Gain vs. Frequency at Various Quiescent Currents (IDD1 + IDD2), Input Power = 24 dBm Input Power = 28 dBm Rev. A | Page 10 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE