Datasheet HMC994A (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz |
| 页数 / 页 | 14 / 5 — HMC994A. GaAs pHEMT MMIC. 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. P1dB vs. … |
| 文件格式/大小 | PDF / 848 Kb |
| 文件语言 | 英语 |
HMC994A. GaAs pHEMT MMIC. 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. P1dB vs. Idd. Psat vs Temperature. Psat vs. Vdd. Psat vs Idd
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文件文字版本
HMC994A
v04.0918
GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz P1dB vs. Idd Psat vs Temperature
32 32 IP 30 30 H 28 28 ) m 26 (dB 26 at s P1dB (dBm) P R - C 24 24 E 22 22 W 20 20 O 0 5 10 15 20 25 30 0 5 10 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C 175mA 250mA R & P A E
Psat vs. Vdd Psat vs Idd
32 IN 32 30 30 28 28 S - L ) m m R (dB 26 (dB 26 at s at P s P IE 24 24 22 22 LIF P 20 20 0 5 10 15 20 25 30 0 5 10 15 20 25 30 M FREQUENCY (GHz) FREQUENCY (GHz) A +8V +10V +11V 175mA 250mA
Power Compression @ 16 GHz Gain & Power vs. Idd @ 16 GHz
32 370 35 ) m 28 355 ) % 30 (dB 24 340 at s , PAE( ), P 20 325 B) I m 25 (d dd N 16 310 ( (dB AI m A ) 1dB 20 ), G 12 295 ), P Bm 8 280 t(d (dB u n 15 ai Po 4 265 G 0 250 10 175 200 225 250 0 2 4 6 8 10 12 14 16 18 20 22 Vdd (V) INPUT POWER (dBm) Pout Gain PAE GAIN P1dB Psat Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Input Return Loss vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit
v04.0918
GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz P1dB vs. Idd Psat vs Temperature
32 32 IP 30 30 H 28 28 ) m 26 (dB 26 at s P1dB (dBm) P R - C 24 24 E 22 22 W 20 20 O 0 5 10 15 20 25 30 0 5 10 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C 175mA 250mA R & P A E
Psat vs. Vdd Psat vs Idd
32 IN 32 30 30 28 28 S - L ) m m R (dB 26 (dB 26 at s at P s P IE 24 24 22 22 LIF P 20 20 0 5 10 15 20 25 30 0 5 10 15 20 25 30 M FREQUENCY (GHz) FREQUENCY (GHz) A +8V +10V +11V 175mA 250mA
Power Compression @ 16 GHz Gain & Power vs. Idd @ 16 GHz
32 370 35 ) m 28 355 ) % 30 (dB 24 340 at s , PAE( ), P 20 325 B) I m 25 (d dd N 16 310 ( (dB AI m A ) 1dB 20 ), G 12 295 ), P Bm 8 280 t(d (dB u n 15 ai Po 4 265 G 0 250 10 175 200 225 250 0 2 4 6 8 10 12 14 16 18 20 22 Vdd (V) INPUT POWER (dBm) Pout Gain PAE GAIN P1dB Psat Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Input Return Loss vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit