Datasheet HMC906A (Analog Devices) - 9
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz |
| 页数 / 页 | 12 / 9 — HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Pad … |
| 文件格式/大小 | PDF / 601 Kb |
| 文件语言 | 英语 |
HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Pad Descriptions
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Pad Descriptions
pad number function Description interface schematic ip H This pad is AC coupled and matched to 50 ohms 1 rfin over the operating frequency range. r - C e w Gate control for amplifier. external bypass caps o 100 pf, 0.1 µf and 4.7 µf are required. only one pad p 2, 12 Vgg connection is required as these two pads are connected on-chip. r & A e Drain bias voltage for the top half of the amplifier. external 3 - 6 Vdd1 bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors. lin . This pad is AC coupled and matched to 50 ohms 7 rfoUT s - over the operating frequency range. r ie Drain bias voltage for the lower half of the amplifier. exter- 8 - 11 Vdd2 nal bypass capacitors of 100 pf required for each pad, lif followed by common 0.1 µf and 4.7 µf are capacitors. p m A Die Bottom GnD Die bottom must be connected to rf/DC ground. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
9
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Pad Descriptions
pad number function Description interface schematic ip H This pad is AC coupled and matched to 50 ohms 1 rfin over the operating frequency range. r - C e w Gate control for amplifier. external bypass caps o 100 pf, 0.1 µf and 4.7 µf are required. only one pad p 2, 12 Vgg connection is required as these two pads are connected on-chip. r & A e Drain bias voltage for the top half of the amplifier. external 3 - 6 Vdd1 bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors. lin . This pad is AC coupled and matched to 50 ohms 7 rfoUT s - over the operating frequency range. r ie Drain bias voltage for the lower half of the amplifier. exter- 8 - 11 Vdd2 nal bypass capacitors of 100 pf required for each pad, lif followed by common 0.1 µf and 4.7 µf are capacitors. p m A Die Bottom GnD Die bottom must be connected to rf/DC ground. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
9
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram