Datasheet HMC1114 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | 10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz |
| 页数 / 页 | 15 / 10 — HMC1114. Data Sheet. –10. +85°C. +25°C. –40°C. –20. (dBm). (d N. SAT, P. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 320 Kb |
| 文件语言 | 英语 |
HMC1114. Data Sheet. –10. +85°C. +25°C. –40°C. –20. (dBm). (d N. SAT, P. TIO. –30. dBm). B (. –40. SE I. , P. P1dB. EVER. –50. dB). P4dB. N (. PSAT AT PIN = 16dBm. –60
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文件文字版本
HMC1114 Data Sheet 0 45 –10 +85°C +25°C ) –40°C 40 B –20 (dBm) (d N SAT, P TIO 35 –30 LA dBm) SO B ( –40 SE I 4d 30 , P P1dB EVER –50 dB) P4dB R N ( PSAT AT PIN = 16dBm AI 25 –60 G –70 20 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
032
24 25 26 27 28
035
FREQUENCY (GHz)
13530-
VDD (V)
13530- Figure 32. Reverse Isolation vs. Frequency at Various Temperatures Figure 35. Gain, P4dB, and PSAT vs. Supply Voltage (VDD) at 3.2 GHz
45 20 18 3.8GHz 40 16 3.25GHz (dBm) ) 2.7GHz SAT (W 14 N , P 35 TIO 12 dBm) PA B ( 10 ISSI 4d 30 D , P 8 P1dB ER dB) P4dB W 6 N ( PSAT AT PIN = 16dBm PO AI 25 G 4 2 20100 150 200 250 300 0
033
0 5 10 15 20 25
036
IDD (mA)
13530-
INPUT POWER (dBm)
13530- Figure 33. Gain, Output Power for 4 dB Compression (P4dB), and Saturated Figure 36. Power Dissipation vs. Input Power at 85°C Output Power (PSAT) vs. Supply Current (IDD)
80 40 70 +85°C 35 +25°C –40°C 60 30 dBc) C ( 25 ) 50 NI O E (% 20 PA 40 +85°C 15 ND HARM +25°C –40°C 30 SECO 10 20 5 10 0 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
034
2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
037
FREQUENCY (GHz)
13530-
FREQUENCY (GHz)
13530- Figure 34. Power Added Efficiency (PAE) vs. Frequency at Various Figure 37. Second Harmonic vs. Frequency at Various Temperatures, Temperatures, PIN = 16 dBm POUT = 30 dBm Rev. A | Page 10 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL SUPPLY CURRENT BY VDD ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION PRINTED CIRCUIT BOARD (PCB) BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE
032
24 25 26 27 28
035
FREQUENCY (GHz)
13530-
VDD (V)
13530- Figure 32. Reverse Isolation vs. Frequency at Various Temperatures Figure 35. Gain, P4dB, and PSAT vs. Supply Voltage (VDD) at 3.2 GHz
45 20 18 3.8GHz 40 16 3.25GHz (dBm) ) 2.7GHz SAT (W 14 N , P 35 TIO 12 dBm) PA B ( 10 ISSI 4d 30 D , P 8 P1dB ER dB) P4dB W 6 N ( PSAT AT PIN = 16dBm PO AI 25 G 4 2 20100 150 200 250 300 0
033
0 5 10 15 20 25
036
IDD (mA)
13530-
INPUT POWER (dBm)
13530- Figure 33. Gain, Output Power for 4 dB Compression (P4dB), and Saturated Figure 36. Power Dissipation vs. Input Power at 85°C Output Power (PSAT) vs. Supply Current (IDD)
80 40 70 +85°C 35 +25°C –40°C 60 30 dBc) C ( 25 ) 50 NI O E (% 20 PA 40 +85°C 15 ND HARM +25°C –40°C 30 SECO 10 20 5 10 0 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
034
2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
037
FREQUENCY (GHz)
13530-
FREQUENCY (GHz)
13530- Figure 34. Power Added Efficiency (PAE) vs. Frequency at Various Figure 37. Second Harmonic vs. Frequency at Various Temperatures, Temperatures, PIN = 16 dBm POUT = 30 dBm Rev. A | Page 10 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS TOTAL SUPPLY CURRENT BY VDD ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION PRINTED CIRCUIT BOARD (PCB) BILL OF MATERIALS OUTLINE DIMENSIONS ORDERING GUIDE