Datasheet HMC1144 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | 35 GHz to 70 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier |
| 页数 / 页 | 16 / 5 — Data Sheet. HMC1144. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating. … |
| 修订版 | D |
| 文件格式/大小 | PDF / 351 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC1144. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating. ESD CAUTION
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Data Sheet HMC1144 ABSOLUTE MAXIMUM RATINGS Table 4.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (V stress rating only; functional operation of the product at these DD1A to VDD4A) 4.5 V Gate Bias Voltage (V or any other conditions above those indicated in the GG1B) −2 V to 0 V dc RF Input Power (RFIN) 22 dBm operational section of this specification is not implied. Channel Temperature 175°C Operation beyond the maximum operating conditions for Continuous Power Dissipation (P extended periods may affect product reliability. DISS), 1.770 W T A = 85°C (Derate 19.2 mW/°C Above 85°C) Thermal Resistance, θ
ESD CAUTION
JA (Channel to 50.83°C/W Bottom Die) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) ±125 V, Class 0B Rev. D | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 35 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE 50 GHz TO 70 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ALTERNATE BIASING CONFIGURATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (V stress rating only; functional operation of the product at these DD1A to VDD4A) 4.5 V Gate Bias Voltage (V or any other conditions above those indicated in the GG1B) −2 V to 0 V dc RF Input Power (RFIN) 22 dBm operational section of this specification is not implied. Channel Temperature 175°C Operation beyond the maximum operating conditions for Continuous Power Dissipation (P extended periods may affect product reliability. DISS), 1.770 W T A = 85°C (Derate 19.2 mW/°C Above 85°C) Thermal Resistance, θ
ESD CAUTION
JA (Channel to 50.83°C/W Bottom Die) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) ±125 V, Class 0B Rev. D | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 35 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE 50 GHz TO 70 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ALTERNATE BIASING CONFIGURATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE