Datasheet HMC7441 (Analog Devices) - 7

HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Pad Descriptions
Pad Number Function Description Interface Schematic IP RF signal input. This pin is AC coupled and matched to 50 1 RFIN Ohms over the operating frequency range. H Gate control for amplifier. Vgg1 and Vgg2. External bypass R - C capacitors of 100pF, 0.01uF, and 4.7uF are required, 2, 9 Vgg1, Vgg2 also required is an in line 20 Ohm resistor, see E Application Circuit. W O Drain bias voltage for the top half of the amplifier. External 3, 4, 5, 7, 8 Vdd1-4 bypass capacitors of 100pF required for each pin, followed by common 0.01uF and 4.7uF Capacitors. R & P A E RF signal output. This pad is AC coupled and matched to 50 7 RFOUT Ohms over the operating frequency range. IN Die Bottom GND Die bottom must be connected to RF/DC ground. S - L R IE
Application Circuit
LIF P M A Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
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