Datasheet HMC7149 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz |
| 页数 / 页 | 10 / 1 — HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Typical … |
| 文件格式/大小 | PDF / 944 Kb |
| 文件语言 | 英语 |
HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC7149
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10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features
The HMC7149 is ideal for: High Psat: +40 dBm IP • Test Instrumentation Power Gain at Psat: +10 dB H • General Communications High Output IP3: +39.5 dBm • Radar Small Signal Gain: 20 dB R - C Supply Voltage: +28 V @ 680 mA E 50 Ohm Matched Input/Output W Die Size: 3.4 x 4.5 x 0.1 mm O
Functional Diagram General Description
The HMC7149 is an 10W Gal ium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 R & P GHz. The amplifier typical y provides 20dB of small A signal gain, +40 dBm of saturated output power, and E +39.5 dBm output IP3 at +28 dBm output power per IN tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules S - L (MCMs). All electrical performance data was aquired R with the die eutectical y attached to 1.02 mm (40 mil) IE thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission LIF lines on alumina. P M
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1
] A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 10 - 14 14 - 16 16 - 18 GHz Small Signal Gain 19 21 18 20 17 19 18 20 dB Gain Flatness ±0.5 ±0.6 ±0.5 ±0.7 dB Gain Variation Over Temperature 0.023 0.02 0.02 0.018 dB/ °C Input Return Loss 17 17 16 11 dB Output Return Loss 17 17 18 12 dB Output Power for 4 dB Compression 35 35 35 36 dBm (P4dB) Power Gain for 4 dB compression 17 16 15 17 dB (P4dB) Saturated Output Power (Psat) 40 40 40 40 dBm Output Third Order Intercept (IP3) [2] 39.5 39 39.5 40.5 dBm Power Added Efficiency 22 20 20 20 % Supply Current (Idd @ Vdd = 28V) 680 680 680 680 mA [1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical. [2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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Phone: 781-329-4700 • Order On-line at www.analog.com rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
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10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features
The HMC7149 is ideal for: High Psat: +40 dBm IP • Test Instrumentation Power Gain at Psat: +10 dB H • General Communications High Output IP3: +39.5 dBm • Radar Small Signal Gain: 20 dB R - C Supply Voltage: +28 V @ 680 mA E 50 Ohm Matched Input/Output W Die Size: 3.4 x 4.5 x 0.1 mm O
Functional Diagram General Description
The HMC7149 is an 10W Gal ium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 R & P GHz. The amplifier typical y provides 20dB of small A signal gain, +40 dBm of saturated output power, and E +39.5 dBm output IP3 at +28 dBm output power per IN tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules S - L (MCMs). All electrical performance data was aquired R with the die eutectical y attached to 1.02 mm (40 mil) IE thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission LIF lines on alumina. P M
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1
] A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 10 - 14 14 - 16 16 - 18 GHz Small Signal Gain 19 21 18 20 17 19 18 20 dB Gain Flatness ±0.5 ±0.6 ±0.5 ±0.7 dB Gain Variation Over Temperature 0.023 0.02 0.02 0.018 dB/ °C Input Return Loss 17 17 16 11 dB Output Return Loss 17 17 18 12 dB Output Power for 4 dB Compression 35 35 35 36 dBm (P4dB) Power Gain for 4 dB compression 17 16 15 17 dB (P4dB) Saturated Output Power (Psat) 40 40 40 40 dBm Output Third Order Intercept (IP3) [2] 39.5 39 39.5 40.5 dBm Power Added Efficiency 22 20 20 20 % Supply Current (Idd @ Vdd = 28V) 680 680 680 680 mA [1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical. [2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
Phone: 781-329-4700 • Order On-line at www.analog.com rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D