Datasheet HMC1087 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 10 / 4 — HMC1087. 8 WATT GaN MMIC POWER AMPLIFIER,. 2 - 20 GHz. Psat vs. DC Bias. … |
| 文件格式/大小 | PDF / 622 Kb |
| 文件语言 | 英语 |
HMC1087. 8 WATT GaN MMIC POWER AMPLIFIER,. 2 - 20 GHz. Psat vs. DC Bias. IDS vs. Pin. OIP3 vs. Frequency. IM3 vs. Pout/Tone
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文件文字版本
HMC1087
v05.1217
8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Psat vs. DC Bias IDS vs. Pin
45 1.4 1.2 40 1 IP ) A 0.8 H (dBm) ( 35 S ID 0.6 PSAT 0.4 30 R - C 0.2 E 25 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 33 W FREQUENCY (GHz) PIN (dBm) O 24V @ 425 mA 24V @ 850 mA 2 GHz 14 GHz 28V @ 425 mA 28V @ 850 mA 6 GHz 18 GHz 32V @ 425 mA 32V @ 850 mA 10 GHz R & P
OIP3 vs. Frequency IM3 vs. Pout/Tone
A 60 80 E 55 IN 50 60 ) 45 ) m c (dB 40 (dB 40 3 3 S - L IP IM 35 R 30 20 IE 25 20 0 LIF 2 4 6 8 10 12 14 16 18 20 12 14 16 18 20 22 24 26 28 30 32 34 36 38 P FREQUENCY (GHz) POUT/TONE (dBm) M Pout= 11dBm/Tone Pout= 29 dBm/Tone 2 GHz 14 GHz 6 GHz 18 GHz A 10 GHz
Reverse Isolation vs. Temperature Power Dissipation vs. Pin
0 40 35 B) -10 (d 30 N IO ) -20 25 AT (W L 20 ISO ISS -30 PD SE 15 EVER 10 R -40 5 -50 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 33 FREQUENCY (GHz) PIN (dBm) 2 GHz 14 GHz +25C +85C -40C 6 GHz 18 GHz 10 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
v05.1217
8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Psat vs. DC Bias IDS vs. Pin
45 1.4 1.2 40 1 IP ) A 0.8 H (dBm) ( 35 S ID 0.6 PSAT 0.4 30 R - C 0.2 E 25 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 33 W FREQUENCY (GHz) PIN (dBm) O 24V @ 425 mA 24V @ 850 mA 2 GHz 14 GHz 28V @ 425 mA 28V @ 850 mA 6 GHz 18 GHz 32V @ 425 mA 32V @ 850 mA 10 GHz R & P
OIP3 vs. Frequency IM3 vs. Pout/Tone
A 60 80 E 55 IN 50 60 ) 45 ) m c (dB 40 (dB 40 3 3 S - L IP IM 35 R 30 20 IE 25 20 0 LIF 2 4 6 8 10 12 14 16 18 20 12 14 16 18 20 22 24 26 28 30 32 34 36 38 P FREQUENCY (GHz) POUT/TONE (dBm) M Pout= 11dBm/Tone Pout= 29 dBm/Tone 2 GHz 14 GHz 6 GHz 18 GHz A 10 GHz
Reverse Isolation vs. Temperature Power Dissipation vs. Pin
0 40 35 B) -10 (d 30 N IO ) -20 25 AT (W L 20 ISO ISS -30 PD SE 15 EVER 10 R -40 5 -50 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 33 FREQUENCY (GHz) PIN (dBm) 2 GHz 14 GHz +25C +85C -40C 6 GHz 18 GHz 10 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs