Datasheet HMC1087 (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 10 / 6 — HMC1087. 8 WATT GaN MMIC POWER AMPLIFIER,. 2 - 20 GHz. Absolute Maximum … |
| 文件格式/大小 | PDF / 622 Kb |
| 文件语言 | 英语 |
HMC1087. 8 WATT GaN MMIC POWER AMPLIFIER,. 2 - 20 GHz. Absolute Maximum Ratings[1]. Typical Supply Current vs. Vdd
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HMC1087
v05.1217
8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings[1] Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -8V to +0V +28.0 850 Maximum Forward Gate Current 4 mA IP Maximum RF Input Power (RFIN) 34 dBm H Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T=85°C) 33 W (Derate 236 mW/°C above 85°C) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS R - C Thermal Resistance [2] 4.24 °C/W E Maximum VSWR [3] 4:1 W Storage Temperature -55 to +150 °C O Operating Temperature -40 to +85 °C [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. [2] Assumes 0.5mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation R & P
Outline Drawing
A E IN S - L R IE LIF P M A NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE
Die Packaging Information [1]
4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD Standard Alternate 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. GP-1 (Gel Pack) [2] 8. OVERALL DIE SIZE ± .002 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
v05.1217
8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings[1] Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -8V to +0V +28.0 850 Maximum Forward Gate Current 4 mA IP Maximum RF Input Power (RFIN) 34 dBm H Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T=85°C) 33 W (Derate 236 mW/°C above 85°C) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS R - C Thermal Resistance [2] 4.24 °C/W E Maximum VSWR [3] 4:1 W Storage Temperature -55 to +150 °C O Operating Temperature -40 to +85 °C [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. [2] Assumes 0.5mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation R & P
Outline Drawing
A E IN S - L R IE LIF P M A NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE
Die Packaging Information [1]
4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD Standard Alternate 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. GP-1 (Gel Pack) [2] 8. OVERALL DIE SIZE ± .002 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs