Datasheet HMC1086 (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz |
| 页数 / 页 | 9 / 6 — HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Absolute Maximum … |
| 文件格式/大小 | PDF / 643 Kb |
| 文件语言 | 英语 |
HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Absolute Maximum Ratings[1]. Die Packaging Information [1]
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HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Absolute Maximum Ratings[1]
Drain Bias Voltage (Vdd) +32V Gate Bias Voltage (Vgg) -8 V to 0V Maximum Forward Gate Current 11 mA IP ELECTROSTATIC SENSITIVE DEVICE Maximum RF Input Power (RFIN) 33 dBm OBSERVE HANDLING PRECAUTIONS H Maximum VSWR[3] 6:1 Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T = 85 °C) R - C 63.6W (Derate 455 mW/°C above 85 °C) E Thermal Resistance (RTH)[2] 2.2°C/W W Operating Temperature -40 °C to +85°C O Storage Temperature -55 °C to 150 °C [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. R & P [2] Assumes 0.5 mil AuSn die attach to a 40 mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation A NOTES: E
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” IN Standard Alternate 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die S - L 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 8. OVERALL DIE SIZE ± .002 [2] For alternate packaging information contact Hittite R Microwave Corporation. IE LIF
Outline Drawing
P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Absolute Maximum Ratings[1]
Drain Bias Voltage (Vdd) +32V Gate Bias Voltage (Vgg) -8 V to 0V Maximum Forward Gate Current 11 mA IP ELECTROSTATIC SENSITIVE DEVICE Maximum RF Input Power (RFIN) 33 dBm OBSERVE HANDLING PRECAUTIONS H Maximum VSWR[3] 6:1 Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T = 85 °C) R - C 63.6W (Derate 455 mW/°C above 85 °C) E Thermal Resistance (RTH)[2] 2.2°C/W W Operating Temperature -40 °C to +85°C O Storage Temperature -55 °C to 150 °C [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. R & P [2] Assumes 0.5 mil AuSn die attach to a 40 mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation A NOTES: E
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” IN Standard Alternate 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die S - L 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 8. OVERALL DIE SIZE ± .002 [2] For alternate packaging information contact Hittite R Microwave Corporation. IE LIF
Outline Drawing
P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs