Datasheet HMC6981LS6 (Analog Devices)

制造商Analog Devices
描述GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
页数 / 页10 / 1 — HMC6981LS6. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 15 - 20 GHz. Typical …
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HMC6981LS6. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 15 - 20 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC6981LS6 Analog Devices

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HMC6981LS6
v03.1018
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Typical Applications Features
The HmC6981ls6 is ideal for: p1dB output power: +32 dBm T • point-to-point radios 25% pAe @ +34 dBm pout m s • point-to-multi-point radios Gain: 26 dB • sATCom output ip3: +43 dBm r - 50 ohm matched input/output e Ceramic 6 x 6 mm High frequency Air Cavity package w o p
Functional Diagram General Description
The HmC6981ls6 is a four-stage GaAs pHemT mmiC power Amplifier with an integrated temperature r & compensated on-chip power Detector, which operates A between 15 and 20 GHz. The amplifier provides e 26 dB of gain, +34 dBm of saturated output power, and 25% pAe from a +5.5V supply. with an excel ent lin output ip3 of +43 dBm, the HmC6981ls6 is ideal for linear applications such as high capacity point-to-point s - or point-to-multi-point radios or sATCom applications r demanding +34 dBm of efficient saturated output ie power. The HmC6981ls6 is housed in a ceramic 6 x 6 mm high frequency air cavity package which lif exhibits low thermal resistance and is compatible with p high volume surface mount manufacturing techniques. m The rf i/os are internal y matched to 50 ohms. A
Electrical Specifications, T = +25° C A Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +5.5V, Idd = 1100 mA [1]
parameter min. Typ. max. min. Typ. max. Units frequency range 15 - 17 17 - 20 GHz Gain 24 27 23 26 dB Gain Variation over Temperature 0.042 0.038 dB/ °C input return loss 9 13 dB output return loss 13 15 dB output power for 1 dB Compression (p1dB) 30 32 30.5 32.5 dBm saturated output power (psat) 34 34 dBm output Third order intercept (ip3)[2] 42 43 dBm Total supply Current (idd) 1100 1100 mA [1] Adjust Vgg between -2 to 0V to achieve idd = 1100 mA typical. [2] measurement taken at +5.5V @ 1100 mA, pout / Tone = +20 dBm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Frequency P1dB vs. Temperature Psat vs. Temperature P1dB vs. Vdd Psat vs. Vdd Power Compression @ 4 GHz Power Compression @ 10 GHz Power Compression @ 20 GHz Power Dissipation Second Harmonics vs. Temperature @ Pout = 18 dBm Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout Reverse Isolation vs Temperature Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit