Datasheet HMC-APH608 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 22.5 - 26.5 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH608. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 22.5 - 26.5 GHz. … |
| 文件格式/大小 | PDF / 293 Kb |
| 文件语言 | 英语 |
HMC-APH608. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 22.5 - 26.5 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 22.5 - 26.5 GHz Typical Applications Features
This HMC-APH608 is ideal for: Output IP3: +40 dBm • Point-to-Point Radios P1dB: +30 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 4.49 x 1.31 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH608 is a high dynamic range, two stage IE GaAs HEMT MMIC 1 Watt Power Amplifi er which IF operates between 22.5 and 26.5 GHz. The HMC- L APH608 provides 17 dB of gain, and an output power P of +30 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH608 GaAs E HEMT MMIC 1 Watt Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA
[2] L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 22.5 - 26.5 24 - 26.5 GHz Gain 14.5 17 16 17 dB Input Return Loss 8 11 dB Output Return Loss 9 12 dB Output power for 1dB Compression (P1dB) 27 30 28 30 dBm Output Third Order Intercept (IP3) 36 39 37 40 dBm Supply Current (Idd1+Idd2) 950 950 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 214
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0409
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 22.5 - 26.5 GHz Typical Applications Features
This HMC-APH608 is ideal for: Output IP3: +40 dBm • Point-to-Point Radios P1dB: +30 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 4.49 x 1.31 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH608 is a high dynamic range, two stage IE GaAs HEMT MMIC 1 Watt Power Amplifi er which IF operates between 22.5 and 26.5 GHz. The HMC- L APH608 provides 17 dB of gain, and an output power P of +30 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH608 GaAs E HEMT MMIC 1 Watt Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA
[2] L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 22.5 - 26.5 24 - 26.5 GHz Gain 14.5 17 16 17 dB Input Return Loss 8 11 dB Output Return Loss 9 12 dB Output power for 1dB Compression (P1dB) 27 30 28 30 dBm Output Third Order Intercept (IP3) 36 39 37 40 dBm Supply Current (Idd1+Idd2) 950 950 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 214
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D