Datasheet HMC-APH462 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH462. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 15 - 27 GHz. Typical … |
| 文件格式/大小 | PDF / 328 Kb |
| 文件语言 | 英语 |
HMC-APH462. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 15 - 27 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH462
v03.0209
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Typical Applications Features
This HMC-APH462 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +29 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.70 x 2.62 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH462 is a high dynamic range, two stage IE GaAs HEMT MMIC 0.8 Watt Power Amplifi er which IF operates between 15 and 27 GHz. The HMC-APH462 L provides 17 dB of gain, and an output power of +29 P dBm at 1 dB compression from a +5V supply voltage. M All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH462 GaAs HEMT MMIC 1 E Watt Power Amplifi er is compatible with conventional W die attach methods, as well as thermocompression O and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E
Electrical Specifi cations[1]
IN L
T = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA
[2]
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 15 - 17 17 - 27 GHz Gain 12 16 13 17 dB Input Return Loss 15 18 dB Output Return Loss 15 18 dB Output power for 1dB Compression (P1dB) 26 27 29 dBm Output Third Order Intercept (IP3) 34 37 Supply Current (Idd1+Idd2 + Idd3 + Idd4) 1440 1440 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 178
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0209
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Typical Applications Features
This HMC-APH462 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +29 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.70 x 2.62 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH462 is a high dynamic range, two stage IE GaAs HEMT MMIC 0.8 Watt Power Amplifi er which IF operates between 15 and 27 GHz. The HMC-APH462 L provides 17 dB of gain, and an output power of +29 P dBm at 1 dB compression from a +5V supply voltage. M All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH462 GaAs HEMT MMIC 1 E Watt Power Amplifi er is compatible with conventional W die attach methods, as well as thermocompression O and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E
Electrical Specifi cations[1]
IN L
T = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA
[2]
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 15 - 17 17 - 27 GHz Gain 12 16 13 17 dB Input Return Loss 15 18 dB Output Return Loss 15 18 dB Output power for 1dB Compression (P1dB) 26 27 29 dBm Output Third Order Intercept (IP3) 34 37 Supply Current (Idd1+Idd2 + Idd3 + Idd4) 1440 1440 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 178
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D