Datasheet HMC591LP5, 591LP5E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz |
| 页数 / 页 | 8 / 1 — HMC591LP5 / 591LP5E. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6.0 - 9.5 … |
| 文件格式/大小 | PDF / 412 Kb |
| 文件语言 | 英语 |
HMC591LP5 / 591LP5E. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6.0 - 9.5 GHz. Typical Applications. Features. Functional Diagram
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HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features
The HMC591LP5 / HMC591LP5E is ideal for use as a Saturated Output Power: +33 dBm @ 20% PAE power amplifi er for: Output IP3: +41 dBm • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios DC Supply: +7.V @ 1340 mA • Test Equipment & Sensors 11 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 • Space T
Functional Diagram General Description
- SM The HMC591LP5 & HMC591LP5E are high dynamic S range GaAs PHEMT MMIC 2 Watt Power Amplifi ers R which operate from 6 to 9.5 GHz. The amplifi er IE provides 18 dB of gain, +33 dBm of saturated power, IF and 19% PAE from a +7V supply. This 50 Ohm mat- L ched amplifi er does not require any external P components and the RF I/Os are DC blocked for M robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require R A E optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. W O & P R A
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 1340 mA[1] A
E Parameter Min. Typ. Max. Min. Typ. Max. Units IN Frequency Range 6 - 8 6 - 9.5 GHz L Gain 16 19 15 18 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB Output Power for 1 dB 30 32 30 33 dBm Compression (P1dB) Saturated Output Power (Psat) 32.5 33 dBm Output Third Order Intercept (IP3)[2] 41 41 dBm Supply Current (Idd) 1340 1340 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 302
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0107
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features
The HMC591LP5 / HMC591LP5E is ideal for use as a Saturated Output Power: +33 dBm @ 20% PAE power amplifi er for: Output IP3: +41 dBm • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios DC Supply: +7.V @ 1340 mA • Test Equipment & Sensors 11 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 • Space T
Functional Diagram General Description
- SM The HMC591LP5 & HMC591LP5E are high dynamic S range GaAs PHEMT MMIC 2 Watt Power Amplifi ers R which operate from 6 to 9.5 GHz. The amplifi er IE provides 18 dB of gain, +33 dBm of saturated power, IF and 19% PAE from a +7V supply. This 50 Ohm mat- L ched amplifi er does not require any external P components and the RF I/Os are DC blocked for M robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require R A E optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. W O & P R A
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 1340 mA[1] A
E Parameter Min. Typ. Max. Min. Typ. Max. Units IN Frequency Range 6 - 8 6 - 9.5 GHz L Gain 16 19 15 18 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB Output Power for 1 dB 30 32 30 33 dBm Compression (P1dB) Saturated Output Power (Psat) 32.5 33 dBm Output Third Order Intercept (IP3)[2] 41 41 dBm Supply Current (Idd) 1340 1340 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 302
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D