Datasheet HMC591 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz |
| 页数 / 页 | 8 / 1 — HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Typical … |
| 文件格式/大小 | PDF / 418 Kb |
| 文件语言 | 英语 |
HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Typical Applications. Features. Functional Diagram
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HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features
The HMC591 is ideal for use as a power amplifi er for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm 3 • Point-to-Multi-Point Radios Gain: 23 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 1340 mA • Military End-Use 50 Ohm Matched Input/Output IP • Space 2.47 mm x 2.49 mm x 0.1 mm H S - C
Functional Diagram General Description
R The HMC591 is a high dynamic range GaAs PHEMT IE MMIC 2 Watt Power Amplifi er which operates from IF 6 to 10 GHz. This amplifi er die provides 23 dB of L gain and +34 dBm of saturated power, at 24% PAE P from a +7.0V supply. Output IP3 is +43 dBm typical. M The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules R A (MCMs). All data is taken with the chip in a 50 ohm test E fi xture connected via 0.025mm (1 mil) diameter wire W bonds of length 0.31mm (12 mils). For applications O which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 1340 mA[1]
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 6.8 - 9 GHz Gain 20 23 20 23 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 12 14 dB Output Return Loss 11 10 dB Output Power for 1 dB 30 33 30.5 33.5 dBm Compression (P1dB) Saturated Output Power (Psat) 33.5 34 dBm Output Third Order Intercept (IP3)[2] 43 43 dBm Supply Current (Idd) 1340 1340 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 78
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features
The HMC591 is ideal for use as a power amplifi er for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm 3 • Point-to-Multi-Point Radios Gain: 23 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 1340 mA • Military End-Use 50 Ohm Matched Input/Output IP • Space 2.47 mm x 2.49 mm x 0.1 mm H S - C
Functional Diagram General Description
R The HMC591 is a high dynamic range GaAs PHEMT IE MMIC 2 Watt Power Amplifi er which operates from IF 6 to 10 GHz. This amplifi er die provides 23 dB of L gain and +34 dBm of saturated power, at 24% PAE P from a +7.0V supply. Output IP3 is +43 dBm typical. M The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules R A (MCMs). All data is taken with the chip in a 50 ohm test E fi xture connected via 0.025mm (1 mil) diameter wire W bonds of length 0.31mm (12 mils). For applications O which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 1340 mA[1]
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 6.8 - 9 GHz Gain 20 23 20 23 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 12 14 dB Output Return Loss 11 10 dB Output Power for 1 dB 30 33 30.5 33.5 dBm Compression (P1dB) Saturated Output Power (Psat) 33.5 34 dBm Output Third Order Intercept (IP3)[2] 43 43 dBm Supply Current (Idd) 1340 1340 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 78
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D