Datasheet HMC590 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz |
| 页数 / 页 | 8 / 1 — HMC590. GaAs PHEMT MMIC 1 WATT. POWER AMPLIFIER, 6 - 10 GHz. Typical … |
| 文件格式/大小 | PDF / 407 Kb |
| 文件语言 | 英语 |
HMC590. GaAs PHEMT MMIC 1 WATT. POWER AMPLIFIER, 6 - 10 GHz. Typical Applications. Features. Functional Diagram
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HMC590
v02.0109
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features
The HMC590 is ideal for use as a power amplifi er for: Saturated Output Power: +31.5 dBm @ 25% PAE • Point-to-Point Radios Output IP3: +41 dBm 3 • Point-to-Multi-Point Radios Gain: 24 dB • Test Equipment & Sensors DC Supply: +7V @ 820 mA • Military End-Use 50 Ohm Matched Input/Output IP • Space Die Size: 2.47 x 1.33 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC590 is a high dynamic range GaAs PHEMT IE MMIC 1 Watt Power Amplifi er which operates from IF 6 to 10 GHz. This amplifi er die provides 24 dB of L gain, +31.5 dBm of saturated power at 25% PAE P from a +7V supply. The RF I/Os are DC blocked and M matched to 50 Ohms for ease of integration into Multi- Chip-Modules (MCMs). All data is taken with the chip R A in a 50 ohm test fi xture connected via 0.025mm (1 E mil) diameter wire bonds of length 0.31mm (12 mils). W For applications which require optimum OIP3, Idd O should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 820 mA[1]
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 6.8 - 9 GHz Gain 21 24 22 25 dB Gain Variation Over Temperature 0.05 0.07 0.05 0.07 dB/ °C Input Return Loss 10 10 dB Output Return Loss 10 10 dB Output Power for 1 dB 27 30 28.5 31.5 dBm Compression (P1dB) Saturated Output Power (Psat) 31.5 32 dBm Output Third Order Intercept (IP3)[2] 41 41 dBm Supply Current (Idd) 820 820 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 70
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features
The HMC590 is ideal for use as a power amplifi er for: Saturated Output Power: +31.5 dBm @ 25% PAE • Point-to-Point Radios Output IP3: +41 dBm 3 • Point-to-Multi-Point Radios Gain: 24 dB • Test Equipment & Sensors DC Supply: +7V @ 820 mA • Military End-Use 50 Ohm Matched Input/Output IP • Space Die Size: 2.47 x 1.33 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC590 is a high dynamic range GaAs PHEMT IE MMIC 1 Watt Power Amplifi er which operates from IF 6 to 10 GHz. This amplifi er die provides 24 dB of L gain, +31.5 dBm of saturated power at 25% PAE P from a +7V supply. The RF I/Os are DC blocked and M matched to 50 Ohms for ease of integration into Multi- Chip-Modules (MCMs). All data is taken with the chip R A in a 50 ohm test fi xture connected via 0.025mm (1 E mil) diameter wire bonds of length 0.31mm (12 mils). W For applications which require optimum OIP3, Idd O should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = +7V, Idd = 820 mA[1]
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 10 6.8 - 9 GHz Gain 21 24 22 25 dB Gain Variation Over Temperature 0.05 0.07 0.05 0.07 dB/ °C Input Return Loss 10 10 dB Output Return Loss 10 10 dB Output Power for 1 dB 27 30 28.5 31.5 dBm Compression (P1dB) Saturated Output Power (Psat) 31.5 32 dBm Output Third Order Intercept (IP3)[2] 41 41 dBm Supply Current (Idd) 820 820 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 70
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D