Datasheet HMC559 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz |
| 页数 / 页 | 8 / 4 — HMC559. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 20 GHz. Power Compression … |
| 文件格式/大小 | PDF / 434 Kb |
| 文件语言 | 英语 |
HMC559. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 20 GHz. Power Compression @ 2 GHz. Power Compression @ 10 GHz
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HMC559
v03.0208
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz Power Compression @ 2 GHz Power Compression @ 10 GHz
32 32 28 28 Pout Pout Gain Gain 24 PAE 24 PAE 20 20 3 16 16 12 12 8 8 IP Pout (dBm), GAIN (dB), PAE (%) 4 Pout (dBm), GAIN (dB), PAE (%) 4 H 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 INPUT POWER (dBm) INPUT POWER (dBm) S - C R IE
Power Compression @ 20 GHz Power Dissipation
IF 32 5.5 L Max Pdiss @ +85C P 28 5 M 24 4.5 20 R A 16 4 2 GHz E 12 Pout 3.5 Gain W 8 PAE 10 GHz POWER DISSIPATION (W) 3 O Pout (dBm), GAIN (dB), PAE (%) 4 0 2.5 0 2 4 6 8 10 12 14 16 -5 0 5 10 15 20 25 30 INPUT POWER (dBm) INPUT POWER (dBm) R & P A E
Absolute Maximum Ratings Typical Supply Current vs. Vdd
IN L Drain Bias Voltage (Vdd) +11 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc +9.5 399 Gate Bias Voltage (Vgg2) +3V to +5V +10 400 RF Input Power (RFIN)(Vdd = +10 Vdc) +30 dBm +10.5 401 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 5 W (derate 55 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 18 °C/W OBSERVE HANDLING PRECAUTIONS (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 65
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0208
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz Power Compression @ 2 GHz Power Compression @ 10 GHz
32 32 28 28 Pout Pout Gain Gain 24 PAE 24 PAE 20 20 3 16 16 12 12 8 8 IP Pout (dBm), GAIN (dB), PAE (%) 4 Pout (dBm), GAIN (dB), PAE (%) 4 H 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 INPUT POWER (dBm) INPUT POWER (dBm) S - C R IE
Power Compression @ 20 GHz Power Dissipation
IF 32 5.5 L Max Pdiss @ +85C P 28 5 M 24 4.5 20 R A 16 4 2 GHz E 12 Pout 3.5 Gain W 8 PAE 10 GHz POWER DISSIPATION (W) 3 O Pout (dBm), GAIN (dB), PAE (%) 4 0 2.5 0 2 4 6 8 10 12 14 16 -5 0 5 10 15 20 25 30 INPUT POWER (dBm) INPUT POWER (dBm) R & P A E
Absolute Maximum Ratings Typical Supply Current vs. Vdd
IN L Drain Bias Voltage (Vdd) +11 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc +9.5 399 Gate Bias Voltage (Vgg2) +3V to +5V +10 400 RF Input Power (RFIN)(Vdd = +10 Vdc) +30 dBm +10.5 401 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 5 W (derate 55 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 18 °C/W OBSERVE HANDLING PRECAUTIONS (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 65
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D