Datasheet HMC457QS16G, 457QS16GE (Analog Devices)

HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features
The HMC457QS16G / HMC457QS16GE is ideal for Output IP3: +46 dBm applications requiring a high dynamic range amplifi er: Gain: 27 dB @ 1900 MHz • CDMA & W-CDMA 48% PAE @ +32 dBm Pout • GSM, GPRS & Edge +25 dBm W-CDMA Channel Power • Base Stations & Repeaters @ -50 dBc ACPR 11 Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 T Included in the HMC-DK002 Designer’s Kit
Functional Diagram General Description
- SM S The HMC457QS16G & HMC457QS16GE are high R dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifi ers IE operating between 1.7 and 2.2 GHz. Packaged in a IF miniature 16 lead QSOP plastic package, the amplifi er L gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB P from 2.0 to 2.2 GHz. Utilizing a minimum number of M external components, the amplifi er output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ R A E current control. The high output IP3 and PAE make the HMC457QS16G & HMC457QS16GE ideal power W amplifi ers for Cellular/3G base station & repeater O applications. & P
Electrical Specifi cations, T = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1] A
R Parameter Min. Typ. Max. Min. Typ. Max. Units A E Frequency Range 1710 - 1990 2010 - 2170 MHz Gain 24 27 22 25 dB IN L Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB / °C Input Return Loss 11 11 dB Output Return Loss 8 5 dB Output Power for 1dB Compression (P1dB) 26 29 27.5 30.5 dBm Saturated Output Power (Psat) 32.5 32 dBm Output Third Order Intercept (IP3) [2] 42 45 42 45 dBm Noise Figure 6 5 dB Supply Current (Icq) 500 500 mA Control Current (Ipd) 4 4 mA Bias Current (Vbias) 10 10 mA [1] Specifi cations and data refl ect HMC457QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone output power of +15 dBm per tone, 1 MHz spacing. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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